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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：175/34  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Combined dual-wavelength laser diode beam end-pumped single longitudinal mode Pr3+:LiYF4 360 nm ultraviolet laser 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 5
作者:  W.Dou;  S.-S.Pu;  N.Niu;  D.-P.Qu;  X.-J.Meng;  L.Zhao;  Q.Zheng
Adobe PDF(1512Kb)  |  收藏  |  浏览/下载：171/45  |  提交时间：2020/08/24
Ultraviolet lasers,Bragg gratings,Digital storage,Etalons,Fabry-Perot interferometers,Lithium alloys,Lithium compounds,MATLAB