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Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文
Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5
作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang;  Niu Zhichuan;  Tong Cunzhu;  Liu Chongyang
Adobe PDF(404Kb)  |  收藏  |  浏览/下载：358/99  |  提交时间：2019/09/17
Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells  
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:  Song, Y.;  Zhang, L. G.;  Zeng, Y. G.;  Qin, L.;  Zhou, Y. L.;  Ning, Y. Q.;  Wang, L. J.
浏览  |  Adobe PDF(2963Kb)  |  收藏  |  浏览/下载：448/188  |  提交时间：2019/09/17
AlGaInAs quantum well  metal organic chemical vapor deposition  cathodeluminescence  thermal treatment  segregation  lasers  inp  semiconductors  dislocations  ingaalas  epitaxy  origin  band  Materials Science  
Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser 期刊论文
Optics Express, 2018, 卷号: 26, 期号: 7, 页码: 8289-8295
作者:  Li, X.;  Wang, H.;  Qiao, Z. L.;  Guo, X.;  Wang, W. J.;  Ng, G. I.;  Zhang, Y.;  Xu, Y. Q.;  Niu, Z. C.;  Tong, C. Z.;  Liu, C. Y.
浏览  |  Adobe PDF(2533Kb)  |  收藏  |  浏览/下载：326/95  |  提交时间：2019/09/17
saturable absorber  dot lasers  femtosecond  sesams  Optics  
Development of beam combining technology in mid-infrared semiconductor lasers(invited) 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 10
作者:  Cao, Yuxuan;  Shu, Shili;  Sun, Fangyuan;  Zhao, Yufei;  Tong, Cunzhu;  Wang, Lijun
浏览  |  Adobe PDF(539Kb)  |  收藏  |  浏览/下载：382/125  |  提交时间：2019/09/17
Semiconductor lasers  Infrared devices  Laser beams  
Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers 期刊论文
Journal of Infrared and Millimeter Waves, 2017, 卷号: 36, 期号: 3
作者:  Xing, E. B.;  J. M. Rong;  Y. Zhang;  C. Z. Tong;  S. C. Tian;  L. J. Wang;  S. L. Shu;  Z. F. Lu;  Z. C. Niu and L. J. Wang
浏览  |  Adobe PDF(1356Kb)  |  收藏  |  浏览/下载：286/96  |  提交时间：2018/06/13
High efficiency beam shaping of GaSb based diode lasers 期刊论文
Journal of Infrared and Millimeter Waves, 2016, 卷号: 35, 期号: 6
作者:  Wu, H.;  H. Y. Peng;  Y. Q. Ning and L. J. Wang
浏览  |  Adobe PDF(331Kb)  |  收藏  |  浏览/下载：291/72  |  提交时间：2017/09/11
Design and Analysis of 2-mu m InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer 期刊论文
Ieee Journal of Selected Topics in Quantum Electronics, 2016, 卷号: 22, 期号: 6
作者:  Li, X.;  H. Wang;  Z. L. Qiao;  Y. Zhang;  Z. C. Niu;  C. Z. Tong and C. Y. Liu
浏览  |  Adobe PDF(710Kb)  |  收藏  |  浏览/下载：327/70  |  提交时间：2017/09/11
Low lateral divergence 2 mu m InGaSb/AlGaAsSb broad-area quantum well lasers 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 7
作者:  Rong, J. M.;  E. N. Xing;  Y. Zhang;  L. J. Wang;  S. L. Shu;  S. C. Tian;  C. Z. Tong;  X. L. Chai;  Y. Q. Xu;  H. Q. Ni;  Z. C. Niu and L. J. Wang
浏览  |  Adobe PDF(1853Kb)  |  收藏  |  浏览/下载：313/86  |  提交时间：2017/09/11
Silicon-based multilayer gratings with a designable narrowband absorption in the short-wave infrared 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 22
作者:  Liu, X. Y.;  J. S. Gao;  H. G. Yang;  X. Y. Wang and J. L. Zhao
浏览  |  Adobe PDF(3669Kb)  |  收藏  |  浏览/下载：214/56  |  提交时间：2017/09/11
延伸波长In0.82Ga0.18As 红外探测器器件结构优化设计 学位论文
: 中国科学院大学, 2014
作者:  赵旭
Adobe PDF(3292Kb)  |  收藏  |  浏览/下载：437/2  |  提交时间：2015/05/03
“铟镓砷”  “暗电流”  “apsys”