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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：222/49  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Reliability Study of Grating Coupled Semiconductor Laser Based on Raman Spectra Technique 期刊论文
Spectroscopy and Spectral Analysis, 2016, 卷号: 36, 期号: 6
作者:  Jia, P.;  L. Qin;  X. Zhang;  J. Zhang;  T. Y. Liu;  Z. W. Men and Y. Q. Ning
浏览  |  Adobe PDF(226Kb)  |  收藏  |  浏览/下载：386/133  |  提交时间：2017/09/11