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Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices 期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 10, 页码: 8909-8916
作者:  Song, Q. G.;  Lin, T.;  Sun, X.;  Chu, B.;  Su, Z. S.;  Yang, H. S.;  Li, W. L.;  Lee, C. S.
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lead iodide  n-type semiconductor  anode buffer layer  organic  electronic devices  light-emitting-diodes  near-infrared photodetectors  field-effect  transistors  transition-metal oxides  hole-injection layer  solar-cells  photovoltaic cells  buffer layer  delayed fluorescence  spectral  response  Science & Technology - Other Topics  Materials Science  
Consciously Constructing Heterojunction or Direct Z-Scheme Photocatalysts by Regulating Electron Flow Direction 期刊论文
Acs Catalysis, 2018, 卷号: 8, 期号: 3, 页码: 2209-2217
作者:  Jiang, W. S.;  Zong, X. P.;  An, L.;  Hua, S. X.;  Miao, X.;  Luan, S. L.;  Wen, Y. J.;  Tao, F. F.;  Sun, Z. C.
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type II heterojunction  direct Z-scheme  photodeposition  CdS  g-C3N4  composite photocatalyst  graphitic carbon nitride  state z-scheme  visible-light  hydrogen-evolution  solid-state  h-2 evolution  water  semiconductor  system  g-c3n4  Chemistry