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Quantum Confined Indium-Rich Cluster Lasers with Polarized Dual-Wavelength Output 期刊论文
Acs Photonics, 2019, 卷号: 6, 期号: 8, 页码: 1990-1995
作者:  Q.N.Yu;  M.Zheng;  H.X.Tai;  W.Lu;  Y.Shi;  J.H.Yue;  X.Zhang;  Y.Q.Ning;  J.Wu
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InGaAs/GaAs,strains,quantum confined lasers,indium-rich clusters,dual wavelengths,polarization,surface-emitting laser,semiconductor-laser,temperature-dependence,segregation,emission,growth,si,Science & Technology - Other Topics,Materials Science,Optics,Physics  
Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 19, 页码: 19
作者:  P.Steindl;  E.M.Sala;  B.Alen;  D.F.Marron;  D.Bimberg
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single-photon source,temperature-dependence,excitonic recombination,raman-spectra,oxygen donor,gaas,emission,luminescence,photoluminescence,localization,Materials Science,Physics  
Strategy of Solution-Processed All-Inorganic Heterostructure for HumidityTemperature-Stable Perovskite Quantum Dot Light-Emitting Diodes 期刊论文
Acs Nano, 2018, 卷号: 12, 期号: 2, 页码: 1462-1472
作者:  Shi, Z. F.;  Li, S.;  Li, Y.;  Ji, H. F.;  Li, X. J.;  Wu, D.;  Xu, T. T.;  Chen, Y. S.;  Tian, Y. T.;  Zhang, Y. T.;  Shan, C. X.;  Du, G. T.
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perovskite  light-emitting diodes  CsPbBr3  humidity tolerance  temperature tolerance  high-efficiency  zno nanoparticles  temperature-dependence  halide  perovskites  optical-properties  room-temperature  photoluminescence  nanocrystals  luminescence  ch3nh3pbbr3  Chemistry  Science & Technology - Other Topics  Materials Science  
Hydrothermal Synthesis and Upconversion Properties of About 19nm Sc2O3: Er3+, Yb3+ Nanoparticles with Detailed Investigation of the Energy Transfer Mechanism 期刊论文
Nanoscale Research Letters, 2018, 卷号: 13, 页码: 9
作者:  Li, F.;  Li, J.;  Chen, L.;  Huang, Y. X.;  Peng, Y. R.;  Luo, Y. S.;  Zhang, L. G.;  Mu, J. J.
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Sc2O3  Hydrothermal synthesis  Upconversion  Energy transfer  Er3+  Yb3+  power dependence  luminescence  ions  lanthanide  emission  nm  Science & Technology - Other Topics  Materials Science  Physics  
Transparency Engineering in Quantum Dot-Based Memories 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2018, 卷号: 215, 期号: 13, 页码: 7
作者:  Arikan, I. F.;  Cottet, N.;  Nowozin, T.;  Bimberg, D.
浏览  |  Adobe PDF(1968Kb)  |  收藏  |  浏览/下载:263/92  |  提交时间:2019/09/17
band engineering  memory  quantum dots  resonant tunnel  resonant-tunneling current  dependence  Materials Science  Physics