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Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus 期刊论文
Physical Review B, 2017, 卷号: 96, 期号: 15
作者:  Wang, D.;  D. Han;  X. B. Li;  N. K. Chen;  D. West;  V. Meunier;  S. B. Zhang and H. B. Sun
浏览  |  Adobe PDF(1327Kb)  |  收藏  |  浏览/下载：363/104  |  提交时间：2018/06/13
Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction 期刊论文
Journal of Physical Chemistry Letters, 2016, 卷号: 7, 期号: 18
作者:  Han, D.;  J. Bang;  W. Y. Xie;  V. Meunier and S. B. Zhang
浏览  |  Adobe PDF(401Kb)  |  收藏  |  浏览/下载：441/63  |  提交时间：2017/09/11