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Origination and evolution of point defects in AlN film annealed at high temperature 期刊论文
Journal of Luminescence, 2021, 卷号: 235
作者:  C. Kai;  H. Zang;  J. Ben;  K. Jiang;  Z. Shi;  Y. Jia;  X. Cao;  W. Lu;  X. Sun and D. Li
浏览  |  Adobe PDF(4451Kb)  |  收藏  |  浏览/下载：221/76  |  提交时间：2022/06/13
Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文
Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6
作者:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
浏览  |  Adobe PDF(3625Kb)  |  收藏  |  浏览/下载：213/71  |  提交时间：2021/07/06
In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors 期刊论文
Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858
作者:  Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li
浏览  |  Adobe PDF(988Kb)  |  收藏  |  浏览/下载：215/82  |  提交时间：2021/07/06
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.;  Wang, Y.;  Wu, Y.;  Kai, C. H.;  Li, D. B.
浏览  |  Adobe PDF(4418Kb)  |  收藏  |  浏览/下载：680/176  |  提交时间：2019/09/17
light-emitting-diodes  screw dislocations  threading dislocations  phase  epitaxy  gan  films  algan  core  edge  generation  Chemistry  Crystallography  
1064 nm photoresponse enhancement of femtosecond-laser-irradiated Si photodiodes by etching treatment 期刊论文
Applied Physics Express, 2018, 卷号: 11, 期号: 6, 页码: 5
作者:  Wang, K.;  Yang, H. G.;  Wang, X. Y.;  Wang, Y. C.;  Li, Z. Z.;  Gao, J. B.;  Li, B. R.;  Gao, J. S.
浏览  |  Adobe PDF(1081Kb)  |  收藏  |  浏览/下载：439/137  |  提交时间：2019/09/17
infrared-absorption  optical-properties  silicon  pulses  Physics  
Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 32, 页码: 4623-4629
作者:  Ben, J. W.;  Sun, X. J.;  Jia, Y. P.;  Jiang, K.;  Shi, Z. M.;  Liu, H. N.;  Wang, Y.;  Kai, C. H.;  Wu, Y.;  Li, D. B.
浏览  |  Adobe PDF(4418Kb)  |  收藏  |  浏览/下载：492/162  |  提交时间：2019/09/17
light-emitting-diodes  high-quality aln  growth  temperature  sapphire  algan  efficiency  ratio  Chemistry  Crystallography