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Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
浏览  |  Adobe PDF(5258Kb)  |  收藏  |  浏览/下载：541/110  |  提交时间：2022/06/13
Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates 期刊论文
Semiconductor Science and Technology, 2021, 卷号: 36, 期号: 4
作者:  J. Yin;  B. Zhou;  L. Li;  Y. Liu;  W. Guo;  D. N. Talwar;  K. He;  I. T. Ferguson;  L. Wan and Z. C. Feng
浏览  |  Adobe PDF(2206Kb)  |  收藏  |  浏览/下载：331/136  |  提交时间：2022/06/13
Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures 期刊论文
Journal of Materials Science, 2021, 卷号: 56, 期号: 2, 页码: 1481-1491
作者:  M. Tian;  C. Ma;  T. Lin;  J. Liu;  D. N. Talwar;  H. Yang;  J. Cao;  X. Huang;  W. Niu;  I. T. Ferguson;  L. Wan and Z. C. Feng
浏览  |  Adobe PDF(1448Kb)  |  收藏  |  浏览/下载：488/75  |  提交时间：2022/06/13
Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers 期刊论文
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2020, 卷号: 260, 页码: 10
作者:  D. N. Talwar, H. H. Lin and Z. C. Feng
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Microstructure and temperature-dependence of Raman scattering properties of beta-(AlxGa1-x)(2)O-3 crystals 期刊论文
Superlattices and Microstructures, 2020, 卷号: 140, 页码: 9
作者:  X. Chen,W. L. Niu,L. Y. Wan,C. T. Xia,H. Y. Cui,D. N. Talwar and Z. C. Feng
浏览  |  Adobe PDF(4672Kb)  |  收藏  |  浏览/下载：282/86  |  提交时间：2021/07/06
Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers 期刊论文
Materials Chemistry and Physics, 2020, 卷号: 252, 页码: 16
作者:  D. N. Talwar,H. H. Lin and Z. C. Feng
浏览  |  Adobe PDF(10862Kb)  |  收藏  |  浏览/下载：477/62  |  提交时间：2021/07/06