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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：222/49  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Synthesis and Application of Nitrogen-doped Carbon Dots 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 5, 页码: 557-580
作者:  S.-N.Qu;  M.-H.Sun;  Z.Tian;  X.Bao;  Z.-J.Zhou;  D.Zhou;  D.Li
浏览  |  Adobe PDF(22085Kb)  |  收藏  |  浏览/下载：258/80  |  提交时间：2020/08/24
Carbon,Ammonia,Biocompatibility,Biological materials,Doping (additives),Heat treatment,Lighting,Luminescence,Nanodots,Nitrogen,Optical communication,Optoelectronic devices,Quenching,Urea