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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：223/49  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Synthesis and Properties of Novel Isothiocyanatotolane Liquid Crystals with Terminal Difluorovinyl Substitute 期刊论文
Chemical Journal of Chinese Universities-Chinese, 2017, 卷号: 38, 期号: 10
作者:  Li, J. L.;  Z. H. Peng;  J. Li;  M. G. Hu;  Z. W. An and L. Zhang
浏览  |  Adobe PDF(1790Kb)  |  收藏  |  浏览/下载：361/110  |  提交时间：2018/06/13