240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect

doi:10.1088/1674-4926/45/1/012504

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	240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect
	S. Lu, J. Bai, H. Li, K. Jiang, J. Ben, S. Zhang, Z.-H. Zhang, X. Sun and D. Li
	2024
发表期刊	Journal of Semiconductors
ISSN	16744926
卷号	45 期号:1
摘要	240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated. Then, the external quantum efficiency (EQE) and light extraction efficiency (LEE) are systematically investigated by comparing size and edge effects. Here, it is revealed that the peak optical output power increases by 81.83% with the size shrinking from 50.0 to 25.0 μm. Thereinto, the LEE increases by 26.21% and the LEE enhancement mainly comes from the sidewall light extraction. Most notably, transverse-magnetic (TM) mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design. However, when it turns to 12.5 μm sized micro-LEDs, the output power is lower than 25.0 μm sized ones. The underlying mechanism is that even though protected by SiO2 passivation, the edge effect which leads to current leakage and Shockley-Read-Hall (SRH) recombination deteriorates rapidly with the size further shrinking. Moreover, the ratio of the p-contact area to mesa area is much lower, which deteriorates the p-type current spreading at the mesa edge. These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm, which will pave the way for wide applications of deep ultraviolet (DUV) micro-LEDs. © 2024 Chinese Institute of Electronics.
DOI	10.1088/1674-4926/45/1/012504
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收录类别	EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/68781
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	S. Lu, J. Bai, H. Li, K. Jiang, J. Ben, S. Zhang, Z.-H. Zhang, X. Sun and D. Li. 240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect[J]. Journal of Semiconductors,2024,45(1).
APA	S. Lu, J. Bai, H. Li, K. Jiang, J. Ben, S. Zhang, Z.-H. Zhang, X. Sun and D. Li.(2024).240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect.Journal of Semiconductors,45(1).
MLA	S. Lu, J. Bai, H. Li, K. Jiang, J. Ben, S. Zhang, Z.-H. Zhang, X. Sun and D. Li."240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect".Journal of Semiconductors 45.1(2024).

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