Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature

doi:10.1109/led.2023.3262755

CIOMP OpenIR

	Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature
	Y. X. Zhu, K. W. Liu, X. Q. Huang, P. X. Zhang, Q. Ai, Z. Cheng, J. L. Yang, X. Chen, B. H. Li, L. Liu and D. Z. Shen
	2023
发表期刊	Ieee Electron Device Letters
ISSN	0741-3106
卷号	44 期号:5 页码:737-740
摘要	A self-driven p-GaN/i-ZnGa2O4/n-ITO heterojunction broadband ultraviolet (BUV) photodetector was firstly demonstrated in this work with a high working temperature. In the 25-300 degrees C temperature range, the device exhibits excellent and stable BUV photodetection performance. Even at 300 degrees C, a large peak responsivity of similar to 132 mA/W, a broad UV response band ranging from 250 to 400 nm, a high UV-to-visible rejection ratio of nearly 104, and a high -3 dB cutoff frequency of 20 kHz can be still observed at 0 V, which is obviously superior to the other reported high-temperature BUV heterojunction photodetectors. The remarkable performance of our device at high temperature can be attributed to the excellent insulation and high crystalline quality of i-ZnGa2O4 layer, as well as the good electrical properties of p-GaN and n-ITO. Moreover, their wide and complementary band gaps make the device have a very broad UV detection band.
DOI	10.1109/led.2023.3262755
URL	查看原文
收录类别	sci ; ei
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/68290
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. X. Zhu, K. W. Liu, X. Q. Huang, P. X. Zhang, Q. Ai, Z. Cheng, J. L. Yang, X. Chen, B. H. Li, L. Liu and D. Z. Shen. Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature[J]. Ieee Electron Device Letters,2023,44(5):737-740.
APA	Y. X. Zhu, K. W. Liu, X. Q. Huang, P. X. Zhang, Q. Ai, Z. Cheng, J. L. Yang, X. Chen, B. H. Li, L. Liu and D. Z. Shen.(2023).Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature.Ieee Electron Device Letters,44(5),737-740.
MLA	Y. X. Zhu, K. W. Liu, X. Q. Huang, P. X. Zhang, Q. Ai, Z. Cheng, J. L. Yang, X. Chen, B. H. Li, L. Liu and D. Z. Shen."Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature".Ieee Electron Device Letters 44.5(2023):737-740.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Self-Powered p-GaNi-（5365KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载