中国科学院长春光学精密机械与物理研究所

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	Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS2 Schottky Heterostructures
	X. D. Zhu, J. B. He, W. M. Liu, Y. X. Zheng, C. X. Sheng, Y. Luo, S. J. Li, R. J. Zhang and J. H. Chu
	2023
发表期刊	Acs Applied Materials & Interfaces
ISSN	1944-8244
卷号	15期号:1页码:2468-2478
摘要	Stacking two dimensional tunneling heterostructures has always been an important strategy to improve the optoelectronic device performance. However, there are still many disputes about the blocking ability of monolayer (1L-) h-BN on the interlayer coupling. Graphene/h-BN/MoS2 optoelectronic devices have been reported for superior device results. In this study, starting with graphene/h-BN/MoS2 heterostructures, we report experimental evidence of 1L-h-BN barrier layer modulation effects about the electronic band structures and exciton properties. We find that 1L-h-BN insertion only partially blocks the interlayer carrier transfer. In the meantime, the 1L-h-BN barrier layer weakens the interlayer coupling effect, by decreasing the efficient dielectric screening and releasing the quantum confinement. Consequently, the optical conductivity and plasmon excitation slightly improve, and the electronic band structures remain unchanged in graphene/h-BN/MoS2, explaining their fascinating optoelectronic responses. Moreover, the excitonic binding energies of graphene/h-BN/MoS2 redshift with respect to the graphene/MoS2 counterparts. Our results, as well as the broadband optical constants, will help better understand the h-BN barrier layers, facilitating the developing progress of h-BN-based tunneling optoelectronic devices.
DOI	10.1021/acsami.2c20100
URL	查看原文
收录类别	sci
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/68288
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X. D. Zhu, J. B. He, W. M. Liu, Y. X. Zheng, C. X. Sheng, Y. Luo, S. J. Li, R. J. Zhang and J. H. Chu. Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS2 Schottky Heterostructures[J]. Acs Applied Materials & Interfaces,2023,15(1):2468-2478.
APA	X. D. Zhu, J. B. He, W. M. Liu, Y. X. Zheng, C. X. Sheng, Y. Luo, S. J. Li, R. J. Zhang and J. H. Chu.(2023).Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS2 Schottky Heterostructures.Acs Applied Materials & Interfaces,15(1),2468-2478.
MLA	X. D. Zhu, J. B. He, W. M. Liu, Y. X. Zheng, C. X. Sheng, Y. Luo, S. J. Li, R. J. Zhang and J. H. Chu."Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS2 Schottky Heterostructures".Acs Applied Materials & Interfaces 15.1(2023):2468-2478.

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