AlN Thin-Film Vacuum Ultraviolet Photodetector With High Operating Temperature and High Rejection Ratio

doi:10.1109/TED.2023.3303126

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	AlN Thin-Film Vacuum Ultraviolet Photodetector With High Operating Temperature and High Rejection Ratio
	P. Zhang, K. Liu, Y. Zhu, Q. Ai, Z. Cheng, J. Yang, X. Chen, B. Li, L. Liu and D. Shen
	2023
ISSN	00189383
页码	1-5
摘要	AlN thin-film vacuum ultraviolet (VUV) photodetector was prepared by molecular beam epitaxy (MBE) device on c-Al $_{\text{2}}$ O $_{\text{3}}$ substrate. By a complete surface nitridation of sapphire substrate in nitrogen plasma, the epitaxial preparation of high-quality thin AlN film was realized without any buffer layer. The AlN photodetector has an ultralow dark current ( $\sim$ 40 fA at 20 V), a high VUV/ultraviolet-c (UVC) ( $\textit{R}_{\text{185}}$ / $\textit{R}_{\text{222}}$ ) rejection ratio ( $>$ 10 $^{\text{3}}$ ), a high responsivity (30 mA/W), and an ultrafast response (90%–10% decay time $\sim$ 900 ns) at room temperature. More interestingly, an excellent temperature tolerance of the device can be observed, and there is no obvious degradation in the VUV/UVC rejection ratio and response speed with increasing the temperature from 25 $^{\circ}$ C to 500 $^{\circ}$ C. Even at 500 $^{\circ}$ C, the dark current of the device is only 218 pA at 20 V, and the responsivity can reach to 67.3 mA/W. These results indicate that the device has excellent wavelength selective detection ability and high-temperature detection ability in the VUV band, which can be attributed to the relatively high-quality AlN thin film and the avoidance of the impact of buffer layer. Our findings provide an effective way to realize high-performance AlN VUV photodetector, which can be operated in high-temperature environment. IEEE
DOI	10.1109/TED.2023.3303126
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收录类别	sci ; ei
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/68194
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	P. Zhang, K. Liu, Y. Zhu, Q. Ai, Z. Cheng, J. Yang, X. Chen, B. Li, L. Liu and D. Shen. AlN Thin-Film Vacuum Ultraviolet Photodetector With High Operating Temperature and High Rejection Ratio[J],2023:1-5.
APA	P. Zhang, K. Liu, Y. Zhu, Q. Ai, Z. Cheng, J. Yang, X. Chen, B. Li, L. Liu and D. Shen.(2023).AlN Thin-Film Vacuum Ultraviolet Photodetector With High Operating Temperature and High Rejection Ratio.,1-5.
MLA	P. Zhang, K. Liu, Y. Zhu, Q. Ai, Z. Cheng, J. Yang, X. Chen, B. Li, L. Liu and D. Shen."AlN Thin-Film Vacuum Ultraviolet Photodetector With High Operating Temperature and High Rejection Ratio".(2023):1-5.

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