Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure

doi:10.1021/acs.jpclett.3c00853

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	Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure
	R. Yu, F. Yin, D. Zhou, H. Zhu and W. Ji
	2023
ISSN	19487185
页码	4548-4553
摘要	Charge carriers are the basic physical element in an electrically driven quantum-dot light-emitting diode (QLED), which acts as a converter transforming electric energy to light energy. Therefore, it is widely sought after to manage the charge carriers for achieving efficient energy conversion; however, to date, there has been a lack of understanding and efficient strategies. Here, an efficient QLED is achieved by manipulating the charge distribution and dynamics with an n-type 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) layer embedded into the hole-transport layer. Compared with the control QLED, the maximum current efficiency of the TPBi-containing device is enhanced over 30%, reaching 25.0 cd/A, corresponding to a 100% internal quantum efficiency considering the ∼90% photoluminescence quantum yield of the QD film. Our results suggest that there is still a great deal of room to further improve the efficiency in a standard QLED by subtly manipulating the charge carriers. © 2023 American Chemical Society.
DOI	10.1021/acs.jpclett.3c00853
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收录类别	sci ; ei
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/68116
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	R. Yu, F. Yin, D. Zhou, H. Zhu and W. Ji. Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure[J],2023:4548-4553.
APA	R. Yu, F. Yin, D. Zhou, H. Zhu and W. Ji.(2023).Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure.,4548-4553.
MLA	R. Yu, F. Yin, D. Zhou, H. Zhu and W. Ji."Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure".(2023):4548-4553.

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