中国科学院长春光学精密机械与物理研究所

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	GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity
	Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li
	2023
发表期刊	Ieee Transactions on Electron Devices
ISSN	0018-9383
页码	6
摘要	In this report, a polarization-doped n-p-i-p-n GaN/AlxGa1-xN/GaN ultraviolet phototransistor with an Al0.20Ga0.80N insertion layer is proposed. The AlxGa1-xN layer with graded AlN composition is utilized as a p-type layer. The Al0.20Ga0.80N insertion layer is embedded into the unintentionally doped GaN (i-GaN) absorption layer, which can increase the conduction band barrier height and reduce the electron leakage from the substrate for the device. As a result, the dark current lower than 3.40 x 10(-11) A/cm(2) can be obtained. When the device is illuminated with ultraviolet light, the forward biased junction facilitates the photo-generated carrier transport. As a result, a photo-to-dark-current ratio (PDCR) larger than 10(4) at the applied bias of 5 V is realized. The carriers are transported in the region far apart from the device surface, and this gives rise a response with the rise time of 27 ms and decay time of 44 ms, respectively.
DOI	10.1109/ted.2023.3310944
URL	查看原文
收录类别	sci ; ei
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/68069
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li. GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity[J]. Ieee Transactions on Electron Devices,2023:6.
APA	Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li.(2023).GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity.Ieee Transactions on Electron Devices,6.
MLA	Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li."GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity".Ieee Transactions on Electron Devices (2023):6.

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GaN-Based Ultraviole（1106KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览 请求全文

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