Defect-engineered hexagonal boron nitride nanosheets as a new atomic-level directional ion conductor

doi:10.1016/j.ceramint.2023.04.171

CIOMP OpenIR

	Defect-engineered hexagonal boron nitride nanosheets as a new atomic-level directional ion conductor
	G. Wang, X. Luo, C. Chen, B. S. Teketel, B. Xu, W. Yu and B. Lin
	2023
发表期刊	Ceramics International
ISSN	02728842
卷号	49 期号:14 页码:23391-23398
摘要	With electron-conducting information technology, ion-conducting energy and environmental technology are promising for wide applications in a carbon-neutral world, but it has been challenging to achieve directional ion conduction in fast ion conductors, especially at the microscopic or even atomic scale. Here, the authors report a new atomic-level directional ion conductor of defect-engineered hexagonal boron nitride (h-BN) nanosheets for bioinspired nanofluidic iontronic devices, and propose a vacancy-defect-controlled strategy to achieve atomic-level directional hydrogen ion conduction in h-BN nanosheets. The adsorption and migration behaviors of hydrogen ions in h-BN nanosheets with both B and N vacancy defects were systematically investigated through the first-principle method. The best hydrogen adsorption sites are directly above N and B atoms in the B-vacancy and N-vacancy h-BN, respectively. It is found that the migration barriers of hydrogen ion in B-vacancy and N-vacancy h-BN are as high as 1.83–2.47 eV and 1.71–2.30 eV, respectively, which are much higher than the 0.72 eV of intrinsic h-BN nanosheets. This means that hydrogen ions can conduct in defect-free h-BN, while they cannot conduct in B/N-vacancy defects. Accordingly, hydrogen ion conduction in h-BN nanosheets can be directionally controlled by controlling the position of vacancy defects, which can be artificially constructed by femtosecond laser plasma lithography. This work provides a new technology of vacancy-defect-controlled atomic-level directional ions conduction in 2D materials for ion-conductor integrated circuit, and opens the door for constructing bioinspired nanofluidic iontronic devices in future neuronal-computer interfaces. © 2023 Elsevier Ltd and Techna Group S.r.l.
DOI	10.1016/j.ceramint.2023.04.171
URL	查看原文
收录类别	sci ; ei
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67923
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	G. Wang, X. Luo, C. Chen, B. S. Teketel, B. Xu, W. Yu and B. Lin. Defect-engineered hexagonal boron nitride nanosheets as a new atomic-level directional ion conductor[J]. Ceramics International,2023,49(14):23391-23398.
APA	G. Wang, X. Luo, C. Chen, B. S. Teketel, B. Xu, W. Yu and B. Lin.(2023).Defect-engineered hexagonal boron nitride nanosheets as a new atomic-level directional ion conductor.Ceramics International,49(14),23391-23398.
MLA	G. Wang, X. Luo, C. Chen, B. S. Teketel, B. Xu, W. Yu and B. Lin."Defect-engineered hexagonal boron nitride nanosheets as a new atomic-level directional ion conductor".Ceramics International 49.14(2023):23391-23398.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Defect-engineered he（6347KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载