Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity | |
X. Sun, K. W. Liu, X. Chen, Y. X. Zhu, Z. Cheng, J. L. Yang, B. H. Li, L. Liu and D. Z. Shen | |
2023 | |
发表期刊 | Journal of Materials Chemistry C |
ISSN | 2050-7526 |
卷号 | 12期号:1页码:118-124 |
摘要 | epsilon-Ga2O3 films with and without Zn impurity were epitaxially grown by metal organic chemical vapor deposition on a c-plane sapphire substrate, and were then face-to-face annealed in an oxygen atmosphere at 600 degrees C. The structural and photoelectric properties of the thin films were characterized and analyzed in detail. The Zn-doped epsilon-Ga2O3 photodetector exhibits an ultra-high specific detectivity of 1.7 x 10(16) Jones, a very quick response speed of less than 40 ms, and an extremely high UV-visible rejection ratio of 2.0 x 10(8) at a 10 V bias. In addition, the temperature dependent photoresponse properties have been investigated from 30 degrees C to 190 degrees C. The compensation effect of Zn impurities and their suppression of oxygen vacancies, as well as the improvement of crystal quality, should be responsible for the excellent performance of the device. Our results provide a new idea and guidance for achieving high-performance solar-blind photodetectors based on Ga2O3. |
DOI | 10.1039/d3tc03599a |
URL | 查看原文 |
收录类别 | sci ; ei |
语种 | 英语 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/67871 |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | X. Sun, K. W. Liu, X. Chen, Y. X. Zhu, Z. Cheng, J. L. Yang, B. H. Li, L. Liu and D. Z. Shen. Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity[J]. Journal of Materials Chemistry C,2023,12(1):118-124. |
APA | X. Sun, K. W. Liu, X. Chen, Y. X. Zhu, Z. Cheng, J. L. Yang, B. H. Li, L. Liu and D. Z. Shen.(2023).Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity.Journal of Materials Chemistry C,12(1),118-124. |
MLA | X. Sun, K. W. Liu, X. Chen, Y. X. Zhu, Z. Cheng, J. L. Yang, B. H. Li, L. Liu and D. Z. Shen."Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity".Journal of Materials Chemistry C 12.1(2023):118-124. |
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