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Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing
X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen
2023
发表期刊Journal of Materials Chemistry C
ISSN2050-7526
卷号11期号:9页码:3227-3234
摘要Pure and similar to 7.5 at% Zn alloyed beta-Ga2O3 epitaxial films were epitaxially grown by metal organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by 600 degrees C annealing in an oxygen atmosphere. We have characterized the structural, optical and electrical properties of the four prepared samples including as-grown pure beta-Ga2O3, annealed pure beta-Ga2O3, as-grown beta-Ga2O3:Zn and annealed beta-Ga2O3:Zn films in detail. Furthermore, solar-blind UV photodetectors with metal-semiconductor-metal structures fabricated from these epitaxial thin films have been demonstrated. A giant performance enhancement can be observed for beta-Ga2O3 photodetectors by Zn alloying and subsequent oxygen annealing. The device fabricated from the annealed beta-Ga2O3:Zn film shows a low dark current of similar to 3.7 x 10(-11) A, a high responsivity of 2.8 x 10(3) A W-1 and a high UV-vis rejection ratio of 5.6 x 10(5) at 10 V bias. And an ultra-high specific detectivity up to 5.9 x 10(16) cm Hz(1/2) W-1 (Jones) is observed. Such excellent photodetection performance of annealed Ga2O3:Zn devices can be explained by the donor compensation effect and the deep level trap removal effect by the introduction of Zn. Our findings contribute a roadmap for realizing high-performance Ga2O3-based solar-blind photodetectors, and provide a sturdy foundation for future applications.
DOI10.1039/d2tc05204k
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收录类别sci ; ei
语种英语
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/67870
专题中国科学院长春光学精密机械与物理研究所
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X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen. Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing[J]. Journal of Materials Chemistry C,2023,11(9):3227-3234.
APA X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen.(2023).Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing.Journal of Materials Chemistry C,11(9),3227-3234.
MLA X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen."Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing".Journal of Materials Chemistry C 11.9(2023):3227-3234.
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