High-sensitivity self-powered photodetector based on an in-situ prepared CsPbBr3 microwire/InGaN heterojunction

doi:10.1364/oe.505800

CIOMP OpenIR

	High-sensitivity self-powered photodetector based on an in-situ prepared CsPbBr3 microwire/InGaN heterojunction
	L. L. Sun, J. T. Li, J. J. Han, M. Meng, B. H. Li and M. M. Jiang
	2023
发表期刊	Optics Express
ISSN	1094-4087
卷号	31 期号:23 页码:38744-38760
摘要	Low-dimensional CsPbBr3 perovskite materials have gained widespread attention, derived from their remarkable properties and potential for numerous optoelectronic applications. Herein, the sample of CsPbBr3 microwires were prepared horizontally onto n-type InGaN film substrate using an in-plane solution growth method. The resulting CsPbBr3 microwire/InGaN heterojunction allows for the achievement of a highly sensitive and broadband photodetector. Particularly for the implementation in a self-supplying manner, the best-performing photodetector can achieve a superior On/Off ratio of 4.6x105, the largest responsivity similar to 800.0 mA/W, a maximum detectivity surpassing 4.6x 1012 Jones, and a high external quantum efficiency approaching 86.5% upon 405 nm light illumination. A rapid response time (similar to 4.48 ms/7.68 ms) was also achieved. The as-designed CsPbBr3 microwire/InGaN heterojunction device without any encapsulation exhibits superior comprehensive stability. Besides, the device featuring as a single pixel imaging unit can readily detect simple images under broadband light illumination with a high spatial resolution, acknowledging its outstanding imaging capability. The robust photodetection properties could be derived from the intense absorption of CsPbBr3 MWs and high-efficiency charge carriers transporting toward the in-situ formed CsPbBr3/InGaN heterointerface. The results may offer an available strategy for the in-situ construction of best-performing low-dimensional perovskite heterojunction optoelectronic devices. (c) 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
DOI	10.1364/oe.505800
URL	查看原文
收录类别	sci ; ei
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67864
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	L. L. Sun, J. T. Li, J. J. Han, M. Meng, B. H. Li and M. M. Jiang. High-sensitivity self-powered photodetector based on an in-situ prepared CsPbBr3 microwire/InGaN heterojunction[J]. Optics Express,2023,31(23):38744-38760.
APA	L. L. Sun, J. T. Li, J. J. Han, M. Meng, B. H. Li and M. M. Jiang.(2023).High-sensitivity self-powered photodetector based on an in-situ prepared CsPbBr3 microwire/InGaN heterojunction.Optics Express,31(23),38744-38760.
MLA	L. L. Sun, J. T. Li, J. J. Han, M. Meng, B. H. Li and M. M. Jiang."High-sensitivity self-powered photodetector based on an in-situ prepared CsPbBr3 microwire/InGaN heterojunction".Optics Express 31.23(2023):38744-38760.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
High-sensitivity sel（27701KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载