Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| Chemical vapor deposition growth and photodetector performance of lead-free all-inorganic crystalline Cs3Sb2X9 (X = I, Br) perovskite thin films | |
| S. K. Shil, F. Wang, K. O. Egbo, Y. Wang, C. K. G. Kwok, S. W. Tsang, J. C. Ho and K. M. Yu | |
| 2023 | |
| 发表期刊 | Journal of Materials Chemistry C
 |
| ISSN | 2050-7526 |
| 卷号 | 11期号:14页码:4603-4613 |
| 摘要 | Lead-based organic or inorganic halide perovskites (ABX(3), A = organic or inorganic cation, B = lead cation, and X = Cl, Br, I) are well-known for their excellent properties and are technologically suitable for many optoelectronic devices. However, the stability of organic hybrid compounds and the toxicity of lead (Pb) inhibit the development and commercialization of these devices. Consequently, Pb-free, all-inorganic halide perovskites are now the subject of the recent research interest. In this work, we report on the synthesis and properties of Pb-free all-inorganic Cs3Sb2X9 (X = I, Br) perovskite thin films by a two-step CVD approach. The obtained Cs3Sb2I9 and Cs3Sb2Br9 thin films show good crystallinity and exhibit high exciton binding energies with large Stokes shifts of similar to 570 and similar to 630 meV, respectively. Refractive indices of 2.0 and 1.7 were obtained for Cs3Sb2I9 and Cs3Sb2Br9 thin films at their respective emission energies. The optical bandgaps were confirmed to be 2.2 and 2.85 eV for Cs3Sb2I9 and Cs3Sb2Br9 thin films. Photoconductive devices fabricated using these thin films exhibit commendable performance with responsivity of up to 54.5 and 3.6 mA W-1 and high detectivity reaching 4.3 x 10(10) and 1.6 x 10(10) Jones for Cs3Sb2I9 and Cs3Sb2Br9, respectively. Moreover, a stable photoswitching property with fast rise and decay times of 50 ms and 30 ms for Cs3Sb2I9 and 108 ms and 56.2 ms for Cs3Sb2Br9 film photodetectors was observed. The thin films exhibit excellent long-term stability even when stored without encapsulation in ambient air. The properties of these crystalline Cs3Sb2X9 perovskite films and their photodetector performance suggest that they can be promising candidates for a wide range of optoelectronic devices. |
| DOI | 10.1039/d2tc05289j |
| URL | 查看原文 |
| 收录类别 | sci ; ei |
| 语种 | 英语 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.ciomp.ac.cn/handle/181722/67846 |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | S. K. Shil, F. Wang, K. O. Egbo, Y. Wang, C. K. G. Kwok, S. W. Tsang, J. C. Ho and K. M. Yu. Chemical vapor deposition growth and photodetector performance of lead-free all-inorganic crystalline Cs3Sb2X9 (X = I, Br) perovskite thin films[J]. Journal of Materials Chemistry C,2023,11(14):4603-4613. |
| APA | S. K. Shil, F. Wang, K. O. Egbo, Y. Wang, C. K. G. Kwok, S. W. Tsang, J. C. Ho and K. M. Yu.(2023).Chemical vapor deposition growth and photodetector performance of lead-free all-inorganic crystalline Cs3Sb2X9 (X = I, Br) perovskite thin films.Journal of Materials Chemistry C,11(14),4603-4613. |
| MLA | S. K. Shil, F. Wang, K. O. Egbo, Y. Wang, C. K. G. Kwok, S. W. Tsang, J. C. Ho and K. M. Yu."Chemical vapor deposition growth and photodetector performance of lead-free all-inorganic crystalline Cs3Sb2X9 (X = I, Br) perovskite thin films".Journal of Materials Chemistry C 11.14(2023):4603-4613. |
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