Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts

doi:10.1039/d3nr02466k

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	Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts
	L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li
	2023
Source Publication	Nanoscale
ISSN	2040-3364
Volume	15 Issue:32 Pages:13252-13261
Abstract	With the advantages of a moderate band gap, high carrier mobility and good environmental stability, two-dimensional (2D) semiconductors show promising applications in next-generation electronics. However, the accustomed metal-2D semiconductor contact may lead to a strong Fermi level pinning (FLP) effect, which severely limits the practical performance of 2D electronics. Herein, the interfacial properties of the contacts between a promising 2D semiconductor, PtSe2, and a sequence of metal electrodes are systematically investigated. The strong interfacial interactions formed in all metal-PtSe2 contacts lead to chemical bonds and a significant interfacial dipole, resulting in a vertical Schottky barrier for Ag, Au, Pd and Pt-based systems and a lateral Schottky barrier for Al, Cu, Sc and Ti-based systems, with a strong FLP effect. Remarkably, the tunneling probability for most metal-PtSe2 is significantly high and the tunneling-specific resistivity is two orders of magnitude lower than that of the state-of-the-art contacts, demonstrating the high efficiency for electron injection from metals to PtSe2. Moreover, the introduction of h-BN as a buffer layer leads to a weakened FLP effect (S = 0.50) and the transformation into p-type Schottky contact for Pt-PtSe2 contacts. These results reveal the underlying mechanism of the interfacial properties of metal-PtSe2 contacts, which is useful for designing advanced 2D semiconductor-based electronics.
DOI	10.1039/d3nr02466k
URL	查看原文
Indexed By	sci ; ei
Language	英语
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/67795
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li. Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts[J]. Nanoscale,2023,15(32):13252-13261.
APA	L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li.(2023).Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts.Nanoscale,15(32),13252-13261.
MLA	L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li."Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts".Nanoscale 15.32(2023):13252-13261.

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中国科学院长春光学精密机械与物理研究所