Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts | |
L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li | |
2023 | |
Source Publication | Nanoscale
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ISSN | 2040-3364 |
Volume | 15Issue:32Pages:13252-13261 |
Abstract | With the advantages of a moderate band gap, high carrier mobility and good environmental stability, two-dimensional (2D) semiconductors show promising applications in next-generation electronics. However, the accustomed metal-2D semiconductor contact may lead to a strong Fermi level pinning (FLP) effect, which severely limits the practical performance of 2D electronics. Herein, the interfacial properties of the contacts between a promising 2D semiconductor, PtSe2, and a sequence of metal electrodes are systematically investigated. The strong interfacial interactions formed in all metal-PtSe2 contacts lead to chemical bonds and a significant interfacial dipole, resulting in a vertical Schottky barrier for Ag, Au, Pd and Pt-based systems and a lateral Schottky barrier for Al, Cu, Sc and Ti-based systems, with a strong FLP effect. Remarkably, the tunneling probability for most metal-PtSe2 is significantly high and the tunneling-specific resistivity is two orders of magnitude lower than that of the state-of-the-art contacts, demonstrating the high efficiency for electron injection from metals to PtSe2. Moreover, the introduction of h-BN as a buffer layer leads to a weakened FLP effect (S = 0.50) and the transformation into p-type Schottky contact for Pt-PtSe2 contacts. These results reveal the underlying mechanism of the interfacial properties of metal-PtSe2 contacts, which is useful for designing advanced 2D semiconductor-based electronics. |
DOI | 10.1039/d3nr02466k |
URL | 查看原文 |
Indexed By | sci ; ei |
Language | 英语 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.ciomp.ac.cn/handle/181722/67795 |
Collection | 中国科学院长春光学精密机械与物理研究所 |
Recommended Citation GB/T 7714 | L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li. Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts[J]. Nanoscale,2023,15(32):13252-13261. |
APA | L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li.(2023).Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts.Nanoscale,15(32),13252-13261. |
MLA | L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li."Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts".Nanoscale 15.32(2023):13252-13261. |
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