| Van der Waals nanomesh electronics on arbitrary surfaces |
| Y. Meng, X. C. Li, X. L. Kang, W. P. Li, W. Wang, Z. X. Lai, W. J. Wang, Q. Quan, X. M. Bu, S. Yip, P. S. Xie, D. Chen, D. J. Li, F. Wang, C. F. Yeung, C. Y. Lan, C. T. Liu, L. F. Shen, Y. Lu, F. R. Chen, C. Y. Wong and J. C. Ho
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| 2023
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| 发表期刊 | Nature Communications
(IF:12.121[JCR-2019],13.61[5-Year]) |
| 卷号 | 14期号:1页码:14 |
| 摘要 | Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 degrees C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm(2)/Vs, ultrafast photoresponse below 3 mu s in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands. The limited scalability of 1D semiconductors has restricted their large-area optoelectronic applications so far. Here, the authors report the low-temperature synthesis of wafer-scale van der Waals nanomeshes composed of self-welding Te nanowires on various substrates, showing improved transport and photoelectric properties. |
| DOI | 10.1038/s41467-023-38090-8
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| URL | 查看原文
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| 收录类别 | sci
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| 语种 | 英语
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| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.ciomp.ac.cn/handle/181722/67770
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| 专题 | 中国科学院长春光学精密机械与物理研究所
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推荐引用方式
GB/T 7714 |
Y. Meng, X. C. Li, X. L. Kang, W. P. Li, W. Wang, Z. X. Lai, W. J. Wang, Q. Quan, X. M. Bu, S. Yip, P. S. Xie, D. Chen, D. J. Li, F. Wang, C. F. Yeung, C. Y. Lan, C. T. Liu, L. F. Shen, Y. Lu, F. R. Chen, C. Y. Wong and J. C. Ho. Van der Waals nanomesh electronics on arbitrary surfaces[J]. Nature Communications,2023,14(1):14.
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| APA |
Y. Meng, X. C. Li, X. L. Kang, W. P. Li, W. Wang, Z. X. Lai, W. J. Wang, Q. Quan, X. M. Bu, S. Yip, P. S. Xie, D. Chen, D. J. Li, F. Wang, C. F. Yeung, C. Y. Lan, C. T. Liu, L. F. Shen, Y. Lu, F. R. Chen, C. Y. Wong and J. C. Ho.(2023).Van der Waals nanomesh electronics on arbitrary surfaces.Nature Communications,14(1),14.
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| MLA |
Y. Meng, X. C. Li, X. L. Kang, W. P. Li, W. Wang, Z. X. Lai, W. J. Wang, Q. Quan, X. M. Bu, S. Yip, P. S. Xie, D. Chen, D. J. Li, F. Wang, C. F. Yeung, C. Y. Lan, C. T. Liu, L. F. Shen, Y. Lu, F. R. Chen, C. Y. Wong and J. C. Ho."Van der Waals nanomesh electronics on arbitrary surfaces".Nature Communications 14.1(2023):14.
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