Van der Waals nanomesh electronics on arbitrary surfaces

doi:10.1038/s41467-023-38090-8

CIOMP OpenIR

	Van der Waals nanomesh electronics on arbitrary surfaces
	Y. Meng, X. C. Li, X. L. Kang, W. P. Li, W. Wang, Z. X. Lai, W. J. Wang, Q. Quan, X. M. Bu, S. Yip, P. S. Xie, D. Chen, D. J. Li, F. Wang, C. F. Yeung, C. Y. Lan, C. T. Liu, L. F. Shen, Y. Lu, F. R. Chen, C. Y. Wong and J. C. Ho
	2023
发表期刊	Nature Communications
卷号	14 期号:1 页码:14
摘要	Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 degrees C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm(2)/Vs, ultrafast photoresponse below 3 mu s in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands. The limited scalability of 1D semiconductors has restricted their large-area optoelectronic applications so far. Here, the authors report the low-temperature synthesis of wafer-scale van der Waals nanomeshes composed of self-welding Te nanowires on various substrates, showing improved transport and photoelectric properties.
DOI	10.1038/s41467-023-38090-8
URL	查看原文
收录类别	sci
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67770
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. Meng, X. C. Li, X. L. Kang, W. P. Li, W. Wang, Z. X. Lai, W. J. Wang, Q. Quan, X. M. Bu, S. Yip, P. S. Xie, D. Chen, D. J. Li, F. Wang, C. F. Yeung, C. Y. Lan, C. T. Liu, L. F. Shen, Y. Lu, F. R. Chen, C. Y. Wong and J. C. Ho. Van der Waals nanomesh electronics on arbitrary surfaces[J]. Nature Communications,2023,14(1):14.
APA	Y. Meng, X. C. Li, X. L. Kang, W. P. Li, W. Wang, Z. X. Lai, W. J. Wang, Q. Quan, X. M. Bu, S. Yip, P. S. Xie, D. Chen, D. J. Li, F. Wang, C. F. Yeung, C. Y. Lan, C. T. Liu, L. F. Shen, Y. Lu, F. R. Chen, C. Y. Wong and J. C. Ho.(2023).Van der Waals nanomesh electronics on arbitrary surfaces.Nature Communications,14(1),14.
MLA	Y. Meng, X. C. Li, X. L. Kang, W. P. Li, W. Wang, Z. X. Lai, W. J. Wang, Q. Quan, X. M. Bu, S. Yip, P. S. Xie, D. Chen, D. J. Li, F. Wang, C. F. Yeung, C. Y. Lan, C. T. Liu, L. F. Shen, Y. Lu, F. R. Chen, C. Y. Wong and J. C. Ho."Van der Waals nanomesh electronics on arbitrary surfaces".Nature Communications 14.1(2023):14.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Van der Waals nanome（6094KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载