CIOMP OpenIR
Mechanism analysis of oxidation time on performance improvement of additive manufacturing silicon carbide
W. Li; G. Zhang; C. Cui; J. Bao; C. Guo; C. Xu; W. Zhang and W. Zhu
2023
发表期刊Guangxue Jingmi Gongcheng/Optics and Precision Engineering
ISSN1004924X
卷号31期号:23页码:3449-3456
摘要Additive manufacturing combined with reactive sintering can be used to fabricate extremely lightweight silicon carbide ceramic mirrors. However,the mechanical properties of silicon carbide pre⁃ pared by this method,such as flexural strength and elastic modulus,are low and insufficient. A novel method was proposed to improve the properties of silicon carbide by high temperature oxidation. First,sili⁃ con carbide prepared by additive manufacturing and reactive sintering was oxidized at 850 ℃. Thereafter,the effect of oxidation time on material composition and surface defect content was studied. The enhance⁃ ment mechanism of oxidation time on the properties of silicon carbide was elucidated. The results demon⁃ strate that when the oxidation time is 2 h,a dense silica film is in-situ grown on the surface of the material,which can render the surface defects of the material to self-heal and effectively reduce their contents. In ad⁃ dition,the final body obtained the best comprehensive properties by this method,and the flexural strength and elastic modulus are 263. 9 MPa and 384. 75 GPa,with increments of 10. 7% and 14. 4%,respective⁃ ly. This method has the advantages of high efficiency,low cost,and easy operation. The study provides theoretical guidance for improving the performance of additive manufacturing silicon carbide ceramics. © 2023 Chinese Academy of Sciences. All rights reserved.
DOI10.37188/OPE.20233123.3449
URL查看原文
收录类别ei
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/67645
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
W. Li,G. Zhang,C. Cui,et al. Mechanism analysis of oxidation time on performance improvement of additive manufacturing silicon carbide[J]. Guangxue Jingmi Gongcheng/Optics and Precision Engineering,2023,31(23):3449-3456.
APA W. Li.,G. Zhang.,C. Cui.,J. Bao.,C. Guo.,...&W. Zhang and W. Zhu.(2023).Mechanism analysis of oxidation time on performance improvement of additive manufacturing silicon carbide.Guangxue Jingmi Gongcheng/Optics and Precision Engineering,31(23),3449-3456.
MLA W. Li,et al."Mechanism analysis of oxidation time on performance improvement of additive manufacturing silicon carbide".Guangxue Jingmi Gongcheng/Optics and Precision Engineering 31.23(2023):3449-3456.
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Mechanism analysis o(1672KB)期刊论文出版稿开放获取CC BY-NC-SA浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[W. Li]的文章
[G. Zhang]的文章
[C. Cui]的文章
百度学术
百度学术中相似的文章
[W. Li]的文章
[G. Zhang]的文章
[C. Cui]的文章
必应学术
必应学术中相似的文章
[W. Li]的文章
[G. Zhang]的文章
[C. Cui]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Mechanism analysis of oxidation time on perfor.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。