Electronic and topological properties of kagome lattice LaV3Si2

doi:10.1007/s42864-022-00200-2

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	Electronic and topological properties of kagome lattice LaV3Si2
	X.-J. Chen, B.-W. Zhang, D. Han and Z.-C. Zhong
	2023
发表期刊	Tungsten
ISSN	26618028
卷号	5 期号:3 页码:317-324
摘要	Topological kagome lattice at the frontier of fundamental physics plays a key role in non-trivial topological quantum state. Here, we predict and investigate kagome lattice rare-earth vanadium-based quantum material LaV3Si2 using density functional theory calculations. Both phonon spectrum and crystal transformation show stability of this material, which may be grown by experimental method. Dirac fermions, flat bands, and van Hove points as some basic features are presented in band structure and surface states. Further, symmetry-based compatibility relations support enforced semi-metal for occupied electron numbers with strong Berry curvature. Our results suggest that rare-earth vanadium-based RV3Si2 can be treated as a new family kagome lattice. © 2022, The Nonferrous Metals Society of China.
DOI	10.1007/s42864-022-00200-2
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收录类别	ei
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67385
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X.-J. Chen, B.-W. Zhang, D. Han and Z.-C. Zhong. Electronic and topological properties of kagome lattice LaV3Si2[J]. Tungsten,2023,5(3):317-324.
APA	X.-J. Chen, B.-W. Zhang, D. Han and Z.-C. Zhong.(2023).Electronic and topological properties of kagome lattice LaV3Si2.Tungsten,5(3),317-324.
MLA	X.-J. Chen, B.-W. Zhang, D. Han and Z.-C. Zhong."Electronic and topological properties of kagome lattice LaV3Si2".Tungsten 5.3(2023):317-324.

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