Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition

doi:10.1016/j.mssp.2023.107912

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	Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition
	W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang
	2024
Source Publication	Materials Science in Semiconductor Processing
ISSN	1369-8001
Volume	169 Pages:7
Abstract	Monoclinic gallium oxide (B-Ga2O3) has attracted wide attention due to its low-cost single crystal and excellent optoelectronic properties. However, the low specific surface area and high defect density of B-Ga2O3 thin films result in weak light-matter interaction and poor crystal quality, seriously hindering their applications. In this article, the growth of high light-trapping B-Ga2O3 nanorod (NR) film on GaAs substrates by metal-organic chemical vapor deposition (MOCVD) is demonstrated. The GaAs substrates were pre-treated by thermal oxidation (TO) to produce a B-Ga2O3 seed layer. The effect of MOCVD growth conditions on the morphology of B-Ga2O3 NR films is investigated. The growth mechanism of B-Ga2O3 NR films is studied in detail. X-ray diffraction, Raman, and photoluminescence were employed to study the crystal and optical properties of B-Ga2O3 NR films. A significant light-trapping effect with a 40 % reduction in optical reflectance at the wavelength of 254 nm is observed. The results show that the B-Ga2O3 NR films exhibit strong light-matter interaction and have potential in optoelectronic applications.
DOI	10.1016/j.mssp.2023.107912
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Indexed By	sci
Language	英语
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/67378
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang. Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition[J]. Materials Science in Semiconductor Processing,2024,169:7.
APA	W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang.(2024).Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition.Materials Science in Semiconductor Processing,169,7.
MLA	W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang."Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition".Materials Science in Semiconductor Processing 169(2024):7.

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