Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs

doi:10.3390/photonics10060660

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	Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs
	A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Y. Han, S. C. Tian and D. Bimberg
	2023
发表期刊	Photonics
卷号	10 期号:6 页码:15
摘要	A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed performance of the lasers with L-type device topology (with the largest double-mesa sizes) is mainly limited by electrical parasitics showing noticeable damping of the relaxation oscillations. For the S-type device topology (with the smallest double-mesa sizes), the decrease in the parasitic capacitance of the reverse-biased p(+)n-junction region outside the buried tunnel junction region allowed to raise the parasitic cutoff frequency up to 13-14 GHz. The key mechanism limiting the high-speed performance of such devices is thus the damping of the relaxation oscillations. VCSELs with S-type device topology demonstrate more than 13 GHz modulation bandwidth and up to 37 Gbps nonreturn-to-zero data transmission under back-to-back conditions at 20 & DEG;C.
DOI	10.3390/photonics10060660
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收录类别	sci
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67330
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Y. Han, S. C. Tian and D. Bimberg. Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs[J]. Photonics,2023,10(6):15.
APA	A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Y. Han, S. C. Tian and D. Bimberg.(2023).Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs.Photonics,10(6),15.
MLA	A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Y. Han, S. C. Tian and D. Bimberg."Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs".Photonics 10.6(2023):15.

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