Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

doi:10.1007/s12274-022-4070-7

CIOMP OpenIR

	Two-dimensional reconfigurable electronics enabled by asymmetric floating gate
	T. Y. Jin; J. Gao; Y. A. Wang; Y. Zheng; S. Sun; L. Liu; M. Lin and W. Chen
	2022
Source Publication	Nano Research
ISSN	1998-0124
Volume	15 Issue:5 Pages:4439-4447
Abstract	Reconfigurable devices with customized functionalities hold great potential in addressing the scaling limits of silicon-based field-effect transistors (FETs). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity. Here, we report a reconfigurable WSe2 optoelectronic device that can function as photodiode, artificial synapse, and 2-bit memory in a single device, enabled by an asymmetric floating gate (AFG) that can continuously program the device into different homojunction modes. The lateral p-n homojunction formed in the AFG device exhibits high-performance self-powered photodetection, with a responsivity over 0.17 A.W-1 and a wide detection spectral range from violet to near-infrared region. The AFG device can also mimic synaptic features of biological synapses and achieve distinct potentiation/depression behaviors under the modulation of both drain-source bias and light illumination. Moreover, when working as a 2-bit memory via the transition between n-n* and p-n homojunctions, the AFG device shows four distinct conductive states with a high on/off current ratio over 10(6) and good repeatability. Combining reduced processing complexity and reconfigurable functionalities, the WSe2 AFG devices demonstrate great potential towards high-performance photoelectric interconnected circuits.
DOI	10.1007/s12274-022-4070-7
URL	查看原文
Indexed By	sci ; ei
Language	英语
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/67203
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	T. Y. Jin,J. Gao,Y. A. Wang,et al. Two-dimensional reconfigurable electronics enabled by asymmetric floating gate[J]. Nano Research,2022,15(5):4439-4447.
APA	T. Y. Jin.,J. Gao.,Y. A. Wang.,Y. Zheng.,S. Sun.,...&M. Lin and W. Chen.(2022).Two-dimensional reconfigurable electronics enabled by asymmetric floating gate.Nano Research,15(5),4439-4447.
MLA	T. Y. Jin,et al."Two-dimensional reconfigurable electronics enabled by asymmetric floating gate".Nano Research 15.5(2022):4439-4447.

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中国科学院长春光学精密机械与物理研究所