Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Surface silicon nanostructure for enhancement of blue light absorption | |
W. S. Chen; J. Tao; H. T. Xu; D. Gao; J. G. Lv; Y. X. Qin; G. T. Guo; X. L. Li; Q. Wang; Z. H. An; J. Zhang; W. B. Wang and J. Q. Liang | |
2022 | |
发表期刊 | Results in Physics |
ISSN | 2211-3797 |
卷号 | 32页码:8 |
摘要 | To enhance blue light absorption, a nanohole-array was designed and fabricated on the surface of silicon. The absorptivity of the silicon/nanohole-array composite structure was simulated with the finite-difference time-domain method. The result showed that, when the air filling factor f = 0.45, the period P = 400 nm, and the hole depth d = 0.5 mu m, the absorptivity of the silicon was greater than 0.85 in the blue band and the average light absorption gain was about 0.61. A nanohole-array was fabricated with these structural parameters. The experimental results showed that the blue absorptivity of the silicon was greater than 0.91 and the average light absorption gain was about 0.63. For incident light at an angle of 60 degrees, the absorptivity was greater than 0.73 in the blue band. The research demonstrated that the blue light could be absorbed at the deeper position of Si through the nanohole-array. This research may serve as a reference for the design and fabrication of silicon optoelectronic devices with high blue light quantum efficiency. |
DOI | 10.1016/j.rinp.2021.105133 |
URL | 查看原文 |
收录类别 | sci |
语种 | 英语 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/67135 |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | W. S. Chen,J. Tao,H. T. Xu,et al. Surface silicon nanostructure for enhancement of blue light absorption[J]. Results in Physics,2022,32:8. |
APA | W. S. Chen.,J. Tao.,H. T. Xu.,D. Gao.,J. G. Lv.,...&W. B. Wang and J. Q. Liang.(2022).Surface silicon nanostructure for enhancement of blue light absorption.Results in Physics,32,8. |
MLA | W. S. Chen,et al."Surface silicon nanostructure for enhancement of blue light absorption".Results in Physics 32(2022):8. |
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