A Solution-Processed All-Perovskite Memory with Dual-Band Light Response and Tri-Mode Operation

doi:10.1002/adfm.202110975

CIOMP OpenIR

	A Solution-Processed All-Perovskite Memory with Dual-Band Light Response and Tri-Mode Operation
	X. W. Guan; T. Wan; L. Hu; C. H. Lin; J. L. Yang; J. K. Huang; C. Y. Huang; S. Shahrokhi; A. Younis; K. Ramadass; K. W. Liu; A. Vinu; J. B. Yi; D. W. Chu and T. Wu
	2022
Source Publication	Advanced Functional Materials
ISSN	1616-301X
Volume	32 Issue:16 Pages:12
Abstract	Integrating multiple semiconductors with distinct physical properties is a practical design strategy for realizing novel optoelectronic devices with unprecedented functionalities. In this work, a photonic resistive switching (RS) memory is demonstrated based on solution-processed bilayers of strontium titanate (SrTiO3 or STO) quantum dots (QDs) and all-inorganic halide perovskite CsPbBr3 (CPB) with an Ag/STO/CPB/Au architecture. Compared with the single-layer STO or CPB RS device, the double-layer device shows considerably improved RS performance with a high switching ratio over 10(5), an endurance of 3000 cycles, and a retention time longer than 2 x 10(4) s. The formation of heterojunction between STO and CPB significantly enhances the high resistance state, and the separation of the active silver electrode and the CPB layer contributes to the long-term stability. More importantly, the photonic RS device exhibits UV-visible dual-band response due to the photogating effect and the light-induced modification of the heterojunction barrier. Last, tri-mode operation, i.e., photodetector, memory, and photomemory, is demonstrated via tailoring the light and electric stimuli. This bilayer device architecture provides a unique approach toward enhancing the performance of photoresponsive data-storage devices.
DOI	10.1002/adfm.202110975
URL	查看原文
Indexed By	sci ; ei
Language	英语
Citation statistics	Cited Times:38[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/67095
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	X. W. Guan,T. Wan,L. Hu,et al. A Solution-Processed All-Perovskite Memory with Dual-Band Light Response and Tri-Mode Operation[J]. Advanced Functional Materials,2022,32(16):12.
APA	X. W. Guan.,T. Wan.,L. Hu.,C. H. Lin.,J. L. Yang.,...&D. W. Chu and T. Wu.(2022).A Solution-Processed All-Perovskite Memory with Dual-Band Light Response and Tri-Mode Operation.Advanced Functional Materials,32(16),12.
MLA	X. W. Guan,et al."A Solution-Processed All-Perovskite Memory with Dual-Band Light Response and Tri-Mode Operation".Advanced Functional Materials 32.16(2022):12.

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中国科学院长春光学精密机械与物理研究所