Size effects of AlGaInP red vertical micro-LEDs on silicon substrate

doi:10.1016/j.rinp.2022.105449

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	Size effects of AlGaInP red vertical micro-LEDs on silicon substrate
	K. L. Fan; J. Tao; Y. Z. Zhao; P. Y. Li; W. C. Sun; L. C. Zhu; J. G. Lv; Y. X. Qin; Q. Wang; J. Q. Liang and W. B. Wang
	2022
发表期刊	Results in Physics
ISSN	2211-3797
卷号	36 页码:6
摘要	To study the size effect of AlGaInP red micro-LEDs on the silicon substrate, we fabricated five AlGaInP red micro LEDs with different pixel sizes (160 x 160, 80 x 80, 40 x 40, 20 x 20, and 10 x 10 mu m(2)) and studied their electrical and optical properties. Smaller micro-LEDs have smaller leakage current and larger series resistance and can withstand higher current density without the current crowding effect. Due to the larger perimeter-to area ratio of small-sized micro-LEDs, non-radiative recombination increases, which leads to a lower EQE. But smaller micro-LEDs can alleviate the problem of the high-current efficiency droop. In addition, because of a better heat dissipation under a high injection current, smaller micro-LEDs (> 80 mu m) have a smaller center wavelength shift. These experimental results provide important data for designing and fabricating red micro LEDs with different pixel sizes for diverse future applications.
DOI	10.1016/j.rinp.2022.105449
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收录类别	sci
语种	英语
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67086
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	K. L. Fan,J. Tao,Y. Z. Zhao,et al. Size effects of AlGaInP red vertical micro-LEDs on silicon substrate[J]. Results in Physics,2022,36:6.
APA	K. L. Fan.,J. Tao.,Y. Z. Zhao.,P. Y. Li.,W. C. Sun.,...&J. Q. Liang and W. B. Wang.(2022).Size effects of AlGaInP red vertical micro-LEDs on silicon substrate.Results in Physics,36,6.
MLA	K. L. Fan,et al."Size effects of AlGaInP red vertical micro-LEDs on silicon substrate".Results in Physics 36(2022):6.

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