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A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks
Y. L. Zhou; X. Zhang; J. W. Zhang; Y. Q. Ning; Y. G. Zeng and L. J. Wang
2022
发表期刊Journal of Luminescence
ISSN0022-2313
卷号248页码:5
摘要We report a slotted high-order surface grating semiconductor laser without a multi-section design. A wide tuning range of 20 nm with side mode suppression ratios (SMSRs) larger than 30 dB is realized by controlling the temperature and the injection current. With a temperature variation of 30 degrees C, the wavelength tuning range is larger than 10 nm, in contrast to ~3 nm for thermo-optic tuning range in other grating-based lasers. By analyzing the gain and the reflection spectrum of the device, we attribute this wide tuning range to the movement of the temperature-induced gain spectrum between the two adjacent Bragg reflection peaks of high-order surface gratings. This is a new method to realize the wide wavelength tuning range.
DOI10.1016/j.jlumin.2022.118998
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收录类别sci ; ei
语种英语
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/66915
专题中国科学院长春光学精密机械与物理研究所
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Y. L. Zhou,X. Zhang,J. W. Zhang,et al. A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks[J]. Journal of Luminescence,2022,248:5.
APA Y. L. Zhou,X. Zhang,J. W. Zhang,Y. Q. Ning,&Y. G. Zeng and L. J. Wang.(2022).A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks.Journal of Luminescence,248,5.
MLA Y. L. Zhou,et al."A novel method for widely tunable semiconductor lasers: Temperature-induced gain spectrum shift between adjacent grating reflection peaks".Journal of Luminescence 248(2022):5.
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