Modulation Characteristics of High-Speed Transistor Lasers

doi:10.3390/app12094475

CIOMP OpenIR

	Modulation Characteristics of High-Speed Transistor Lasers
	L. T. Fan; P. Jia; Y. X. Lei; Q. Cui; Y. Y. Chen; L. Qin; L. Liang; C. Qiu; Y. Song; Y. B. Wang; Y. Q. Ning and L. J. Wang
	2022
发表期刊	Applied Sciences-Basel
卷号	12 期号:9 页码:21
摘要	The spontaneous emission recombination lifetime of carriers in the active region of transistor lasers (TLs) is significantly reduced due to the accelerated carrier transport in the base region under the collector bias. Thus, it has the potential for use as a high-speed optical fiber communication light source. The unique three-electrode structure of TL notably enriches the modulation methods of the light source. As an important parameter to measure the data transfer rate, the modulation bandwidth of TL has been studied extensively. This paper briefly analyzes the inherent characteristics and advantages of TL and then discusses the progress in the research on TL modulation characteristics. Currently, the common methods to increase the modulation rate include optimizing the device structure, intracavity photon-assisted tunneling, and adding external auxiliary circuits. Through these techniques, single quantum well GaAs- based TL can achieve error-free transmission of 22 Gb/s, and simulation data show that for InP- based TL, this can reach 40 Gb/s. Finally, the challenges faced by TL in the area of optical fiber communication are elucidated.
DOI	10.3390/app12094475
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收录类别	sci
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/66853
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	L. T. Fan,P. Jia,Y. X. Lei,et al. Modulation Characteristics of High-Speed Transistor Lasers[J]. Applied Sciences-Basel,2022,12(9):21.
APA	L. T. Fan.,P. Jia.,Y. X. Lei.,Q. Cui.,Y. Y. Chen.,...&Y. Q. Ning and L. J. Wang.(2022).Modulation Characteristics of High-Speed Transistor Lasers.Applied Sciences-Basel,12(9),21.
MLA	L. T. Fan,et al."Modulation Characteristics of High-Speed Transistor Lasers".Applied Sciences-Basel 12.9(2022):21.

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