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Modulation Characteristics of High-Speed Transistor Lasers
L. T. Fan; P. Jia; Y. X. Lei; Q. Cui; Y. Y. Chen; L. Qin; L. Liang; C. Qiu; Y. Song; Y. B. Wang; Y. Q. Ning and L. J. Wang
2022
发表期刊Applied Sciences-Basel
卷号12期号:9页码:21
摘要The spontaneous emission recombination lifetime of carriers in the active region of transistor lasers (TLs) is significantly reduced due to the accelerated carrier transport in the base region under the collector bias. Thus, it has the potential for use as a high-speed optical fiber communication light source. The unique three-electrode structure of TL notably enriches the modulation methods of the light source. As an important parameter to measure the data transfer rate, the modulation bandwidth of TL has been studied extensively. This paper briefly analyzes the inherent characteristics and advantages of TL and then discusses the progress in the research on TL modulation characteristics. Currently, the common methods to increase the modulation rate include optimizing the device structure, intracavity photon-assisted tunneling, and adding external auxiliary circuits. Through these techniques, single quantum well GaAs- based TL can achieve error-free transmission of 22 Gb/s, and simulation data show that for InP- based TL, this can reach 40 Gb/s. Finally, the challenges faced by TL in the area of optical fiber communication are elucidated.
DOI10.3390/app12094475
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收录类别sci
语种英语
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/66853
专题中国科学院长春光学精密机械与物理研究所
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L. T. Fan,P. Jia,Y. X. Lei,et al. Modulation Characteristics of High-Speed Transistor Lasers[J]. Applied Sciences-Basel,2022,12(9):21.
APA L. T. Fan.,P. Jia.,Y. X. Lei.,Q. Cui.,Y. Y. Chen.,...&Y. Q. Ning and L. J. Wang.(2022).Modulation Characteristics of High-Speed Transistor Lasers.Applied Sciences-Basel,12(9),21.
MLA L. T. Fan,et al."Modulation Characteristics of High-Speed Transistor Lasers".Applied Sciences-Basel 12.9(2022):21.
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