CIOMP OpenIR
Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures
X. Zhu; J. He; R. Zhang; C. Cong; Y. Zheng; H. Zhang; S. Wang; H. Zhao; M. Zhu; S. Zhang; S. Li and L. Chen
2022
Source PublicationNano Research
ISSN19980124
Volume15Issue:3Pages:2674-2681
AbstractInserting hexagonal boron nitride (hBN) as barrier layers into bilayer transition metal dichalcogenides heterointerface has been proved an efficient method to improve two dimensional tunneling optoelectronic device performance. Nevertheless, the physical picture of interlayer coupling effect during incorporation of monolayer (1L-) hBN is not explicit yet. In this article, spectroscopic ellipsometry was used to experimentally obtain the broadband excitonic and critical point properties of WS2/MoS2 and WS2/hBN/MoS2 van der Waals heterostructures. We find that 1L-hBN can only slightly block the interlayer electron transfer from WS2 layer to MoS2 layer. Moreover, insertion of 1L-hBN weakens the interlayer coupling effect by releasing quantum confinement and reducing efficient dielectric screening. Consequently, the exciton binding energies in WS2/hBN/MoS2 heterostructures blueshift comparing to those in WS2/MoS2 heterostructures. In this exciton binding energies tuning process, the reducing dielectric screening effect plays a leading role. In the meantime, the quasi-particle (QP) bandgap remains unchanged before and after 1L-hBN insertion, which is attributed to released quantum confinement and decreased dielectric screening effects canceling each other. Unchanged QP bandgap as along with blueshift exciton binding energies lead to the redshift exciton transition energies in WS2/hBN/MoS2 heterostructures.[Figure not available: see fulltext.]. 2021, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.
DOI10.1007/s12274-021-3774-4
URL查看原文
Indexed Byei
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/66597
Collection中国科学院长春光学精密机械与物理研究所
Recommended Citation
GB/T 7714
X. Zhu,J. He,R. Zhang,et al. Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures[J]. Nano Research,2022,15(3):2674-2681.
APA X. Zhu.,J. He.,R. Zhang.,C. Cong.,Y. Zheng.,...&S. Li and L. Chen.(2022).Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures.Nano Research,15(3),2674-2681.
MLA X. Zhu,et al."Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures".Nano Research 15.3(2022):2674-2681.
Files in This Item: Download All
File Name/Size DocType Version Access License
Effects of interlaye(3963KB)期刊论文出版稿开放获取CC BY-NC-SAView Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[X. Zhu]'s Articles
[J. He]'s Articles
[R. Zhang]'s Articles
Baidu academic
Similar articles in Baidu academic
[X. Zhu]'s Articles
[J. He]'s Articles
[R. Zhang]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[X. Zhu]'s Articles
[J. He]'s Articles
[R. Zhang]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Effects of interlayer coupling on the excitons.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.