Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures

doi:10.1007/s12274-021-3774-4

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	Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures
	X. Zhu; J. He; R. Zhang; C. Cong; Y. Zheng; H. Zhang; S. Wang; H. Zhao; M. Zhu; S. Zhang; S. Li and L. Chen
	2022
发表期刊	Nano Research
ISSN	19980124
卷号	15 期号:3 页码:2674-2681
摘要	Inserting hexagonal boron nitride (hBN) as barrier layers into bilayer transition metal dichalcogenides heterointerface has been proved an efficient method to improve two dimensional tunneling optoelectronic device performance. Nevertheless, the physical picture of interlayer coupling effect during incorporation of monolayer (1L-) hBN is not explicit yet. In this article, spectroscopic ellipsometry was used to experimentally obtain the broadband excitonic and critical point properties of WS2/MoS2 and WS2/hBN/MoS2 van der Waals heterostructures. We find that 1L-hBN can only slightly block the interlayer electron transfer from WS2 layer to MoS2 layer. Moreover, insertion of 1L-hBN weakens the interlayer coupling effect by releasing quantum confinement and reducing efficient dielectric screening. Consequently, the exciton binding energies in WS2/hBN/MoS2 heterostructures blueshift comparing to those in WS2/MoS2 heterostructures. In this exciton binding energies tuning process, the reducing dielectric screening effect plays a leading role. In the meantime, the quasi-particle (QP) bandgap remains unchanged before and after 1L-hBN insertion, which is attributed to released quantum confinement and decreased dielectric screening effects canceling each other. Unchanged QP bandgap as along with blueshift exciton binding energies lead to the redshift exciton transition energies in WS2/hBN/MoS2 heterostructures.[Figure not available: see fulltext.]. 2021, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.
DOI	10.1007/s12274-021-3774-4
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引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/66597
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X. Zhu,J. He,R. Zhang,et al. Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures[J]. Nano Research,2022,15(3):2674-2681.
APA	X. Zhu.,J. He.,R. Zhang.,C. Cong.,Y. Zheng.,...&S. Li and L. Chen.(2022).Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures.Nano Research,15(3),2674-2681.
MLA	X. Zhu,et al."Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures".Nano Research 15.3(2022):2674-2681.

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