A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth

doi:10.3390/s22239239

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	A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth
	J. Q. Chen; C. Chen; Q. Guo; L. Qin; J. W. Zhang; H. Y. Peng; Y. L. Zhou; J. J. Sun; H. Wu; Y. S. Yu; Y. Q. Ning and L. J. Wang
	2022
发表期刊	Sensors
卷号	22 期号:23 页码:11
摘要	We demonstrate a narrow-linewidth, high side-mode suppression ratio (SMSR) semiconductor laser based on the external optical feedback injection locking technology of a femtosecond-apodized (Fs-apodized) fiber Bragg grating (FBG). A single frequency output is achieved by coupling and integrating a wide-gain quantum dot (QD) gain chip with a Fs-apodized FBG in a 1-mu m band. We propose this low-cost and high-integration scheme for the preparation of a series of single-frequency seed sources in this wavelength range by characterizing the performance of 1030 nm and 1080 nm lasers. The lasers have a maximum SMSR of 66.3 dB and maximum output power of 134.6 mW. Additionally, the lasers have minimum Lorentzian linewidths that are measured to be 260.5 kHz; however, a minimum integral linewidth less than 180.4 kHz is observed by testing and analyzing the power spectra of the frequency noise values of the lasers.
DOI	10.3390/s22239239
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收录类别	sci ; ei
语种	英语
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/66363
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J. Q. Chen,C. Chen,Q. Guo,et al. A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth[J]. Sensors,2022,22(23):11.
APA	J. Q. Chen.,C. Chen.,Q. Guo.,L. Qin.,J. W. Zhang.,...&Y. Q. Ning and L. J. Wang.(2022).A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth.Sensors,22(23),11.
MLA	J. Q. Chen,et al."A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth".Sensors 22.23(2022):11.

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