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Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers
L. Cheng; J. Zhang; J. Wang; J. Zhang; J. Yang; S. Wu; Q. Qian and H. Chen
2021
发表期刊Journal of Applied Physics
ISSN218979
卷号130期号:18
摘要In this study, an InGaN laser diode (LD) with InGaN-GaN-InGaN quantum barriers was proposed and studied systematically. The energy band diagrams, stimulated recombination rate, optical field distribution, current distribution near the active region, and power-current-voltage performance curves were investigated. The simulation results suggest that the LD with InGaN-GaN-InGaN quantum barriers has better performance than the LD with conventional GaN and InGaN quantum barriers because of the properly adjusted refraction index profile and energy band diagrams, which are advantageous to both the suppressed leakage of the optical field and electrons out of and the enhanced injection of holes into the active region. 2021 Author(s).
DOI10.1063/5.0071035
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收录类别SCI ; EI
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/65671
专题中国科学院长春光学精密机械与物理研究所
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L. Cheng,J. Zhang,J. Wang,et al. Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers[J]. Journal of Applied Physics,2021,130(18).
APA L. Cheng.,J. Zhang.,J. Wang.,J. Zhang.,J. Yang.,...&Q. Qian and H. Chen.(2021).Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers.Journal of Applied Physics,130(18).
MLA L. Cheng,et al."Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers".Journal of Applied Physics 130.18(2021).
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