Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski-Krastanov quantum dots

doi:10.1038/s41377-021-00564-z

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	Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski-Krastanov quantum dots
	R. S. R. Gajjela; A. L. Hendriks; J. O. Douglas; E. M. Sala; P. Steindl; P. Klenovsky; P. A. J. Bagot; M. P. Moody; D. Bimberg and P. M. Koenraad
	2021
发表期刊	Light-Science & Applications
ISSN	2047-7538
卷号	10 期号:1 页码:13
摘要	We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski-Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of similar to 4 x 10(11) cm(-2). APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding similar to InxGa1 - xAs1 - ySby, where x = 0.25-0.30 and y = 0.10-0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.
DOI	10.1038/s41377-021-00564-z
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收录类别	SCI ; EI
引用统计	被引频次：17[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65659
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	R. S. R. Gajjela,A. L. Hendriks,J. O. Douglas,et al. Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski-Krastanov quantum dots[J]. Light-Science & Applications,2021,10(1):13.
APA	R. S. R. Gajjela.,A. L. Hendriks.,J. O. Douglas.,E. M. Sala.,P. Steindl.,...&D. Bimberg and P. M. Koenraad.(2021).Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski-Krastanov quantum dots.Light-Science & Applications,10(1),13.
MLA	R. S. R. Gajjela,et al."Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski-Krastanov quantum dots".Light-Science & Applications 10.1(2021):13.

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