Simulation and experimental research of a high-order Bragg grating semiconductor laser

doi:10.1364/AO.432175

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	Simulation and experimental research of a high-order Bragg grating semiconductor laser
	E. Siyu; Y. Zhou; X. Zhang; J. Zhang; Y. Zeng; J. Cui; Y. Liu; Y. Ning and L. Wang
	2021
发表期刊	Applied Optics
ISSN	1559128X
卷号	60 期号:21 页码:6076-6079
摘要	In this paper, the influence of the epitaxial structure on distributed Bragg reflector (DBR) grating characteristics is studied by simulation analysis. Comparative analysis shows that the symmetrical epitaxial structure can achieve a lower threshold current and, thus, a higher power. Based on the simulated structure, a DBR laser based on a symmetric epitaxial structure was fabricated, and a single longitudinal mode laser output at 1060 nm was obtained. The maximum power was 104.5mW, and the side mode suppression ratio (SMSR) is 43 dB. 2021 Optical Society of America.
DOI	10.1364/AO.432175
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收录类别	SCI ; EI
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65629
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	E. Siyu,Y. Zhou,X. Zhang,et al. Simulation and experimental research of a high-order Bragg grating semiconductor laser[J]. Applied Optics,2021,60(21):6076-6079.
APA	E. Siyu.,Y. Zhou.,X. Zhang.,J. Zhang.,Y. Zeng.,...&Y. Ning and L. Wang.(2021).Simulation and experimental research of a high-order Bragg grating semiconductor laser.Applied Optics,60(21),6076-6079.
MLA	E. Siyu,et al."Simulation and experimental research of a high-order Bragg grating semiconductor laser".Applied Optics 60.21(2021):6076-6079.

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