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Simulation and experimental research of a high-order Bragg grating semiconductor laser
E. Siyu; Y. Zhou; X. Zhang; J. Zhang; Y. Zeng; J. Cui; Y. Liu; Y. Ning and L. Wang
2021
Source PublicationApplied Optics
ISSN1559128X
Volume60Issue:21Pages:6076-6079
AbstractIn this paper, the influence of the epitaxial structure on distributed Bragg reflector (DBR) grating characteristics is studied by simulation analysis. Comparative analysis shows that the symmetrical epitaxial structure can achieve a lower threshold current and, thus, a higher power. Based on the simulated structure, a DBR laser based on a symmetric epitaxial structure was fabricated, and a single longitudinal mode laser output at 1060 nm was obtained. The maximum power was 104.5mW, and the side mode suppression ratio (SMSR) is 43 dB. 2021 Optical Society of America.
DOI10.1364/AO.432175
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Indexed BySCI ; EI
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Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/65629
Collection中国科学院长春光学精密机械与物理研究所
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GB/T 7714
E. Siyu,Y. Zhou,X. Zhang,et al. Simulation and experimental research of a high-order Bragg grating semiconductor laser[J]. Applied Optics,2021,60(21):6076-6079.
APA E. Siyu.,Y. Zhou.,X. Zhang.,J. Zhang.,Y. Zeng.,...&Y. Ning and L. Wang.(2021).Simulation and experimental research of a high-order Bragg grating semiconductor laser.Applied Optics,60(21),6076-6079.
MLA E. Siyu,et al."Simulation and experimental research of a high-order Bragg grating semiconductor laser".Applied Optics 60.21(2021):6076-6079.
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