Raman Scattering Methods for Monitoring the Electric Properties of the Postannealed Bulk Heterojunction

doi:10.1021/acsaem.1c01600

CIOMP OpenIR

	Raman Scattering Methods for Monitoring the Electric Properties of the Postannealed Bulk Heterojunction
	D. Zhang; S. Yang; W. Zhao; L. Yang; Y. Liu; M. Wei; L. Chen and J. Yang
	2021
发表期刊	ACS Applied Energy Materials
ISSN	25740962
卷号	4 期号:8 页码:8360-8367
摘要	In the case of bulk heterojunctions (BHJs) of regioregular poly(3-hexylthiophene) (P3HT) and the soluble fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), electrical properties have been studied based on the Raman spectroscopy. Significantly, a well enough noteworthy phenomenon is the return-back shift of the Raman signal at the 1450 cm-1 with increasing annealing temperature, which was first observed using the normal Raman spectroscopy of the BHJ system. Based on the Herzberg-Teller coupling term in the organic-organic system, the return-back shift may be due to the charge transfer (CT), resulting in the significant change of resistivity (). More importantly, the low annealing temperature-dependent frequency shift (N) is carefully investigated with , and (-N)2. In addition, the connection between Raman intensity and is also established. This study is unprecedented to establish a clear connection between frequency shift and electrical properties, indicating that the Raman technique opens an avenue to analyze the electrical properties and characterize the performance of the battery.
DOI	10.1021/acsaem.1c01600
URL	查看原文
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65569
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	D. Zhang,S. Yang,W. Zhao,et al. Raman Scattering Methods for Monitoring the Electric Properties of the Postannealed Bulk Heterojunction[J]. ACS Applied Energy Materials,2021,4(8):8360-8367.
APA	D. Zhang.,S. Yang.,W. Zhao.,L. Yang.,Y. Liu.,...&L. Chen and J. Yang.(2021).Raman Scattering Methods for Monitoring the Electric Properties of the Postannealed Bulk Heterojunction.ACS Applied Energy Materials,4(8),8360-8367.
MLA	D. Zhang,et al."Raman Scattering Methods for Monitoring the Electric Properties of the Postannealed Bulk Heterojunction".ACS Applied Energy Materials 4.8(2021):8360-8367.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Raman Scattering Met（4128KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载