Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission

doi:10.1021/acsami.1c09175

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	Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission
	Z. Shi; Z. Qi; H. Zang; K. Jiang; Y. Chen; Y. Jia; T. Wu; S. Zhang; X. Sun and D. Li
	2021
发表期刊	ACS Applied Materials and Interfaces
ISSN	19448244
卷号	13 期号:31 页码:37380-37387
摘要	A single-photon emission (SPE) system based on a solid state is one of the fundamental branches in quantum information and communication technologies. The traditional bulk semiconductors suffered limitations of difficult photon extraction and long radiative lifetime. Two-dimensional (2D) semiconductors with an entire open structure and low dielectric screening can overcome these shortcomings. In this work, we focus on monolayer h-AlN due to its wide band gap and the successful achievement of SPE compared to its bulk counterpart. We systematically investigate the properties of point defects, including vacancies, antisites, and impurities, in monolayer h-AlN by employing hybrid density functional theory calculations. The -1 charged Al vacancy (VAl-) and +1 charged nitrogen antisite (NAl+) are predicted to achieve SPE with the zero-phonon lines of 0.77 and 1.40 eV, respectively. Moreover, the charged point-defect complex CAlVN+, which is composed of vacancies and carbon substitutions, also can be used for SPE. Our results extend the avenue for realizing SPE in 2D semiconductors. 2021 American Chemical Society.
DOI	10.1021/acsami.1c09175
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收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65537
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Z. Shi,Z. Qi,H. Zang,et al. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission[J]. ACS Applied Materials and Interfaces,2021,13(31):37380-37387.
APA	Z. Shi.,Z. Qi.,H. Zang.,K. Jiang.,Y. Chen.,...&X. Sun and D. Li.(2021).Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission.ACS Applied Materials and Interfaces,13(31),37380-37387.
MLA	Z. Shi,et al."Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission".ACS Applied Materials and Interfaces 13.31(2021):37380-37387.

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