Performance enhancement of a p-Si/n-ZnGa2O4heterojunction solar-blind UV photodetector through interface engineering

doi:10.1039/d1tc01705e

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	Performance enhancement of a p-Si/n-ZnGa2O4heterojunction solar-blind UV photodetector through interface engineering
	D. Han; K. Liu; J. Yang; X. Chen; B. Li; L. Liu and D. Shen
	2021
发表期刊	Journal of Materials Chemistry C
ISSN	20507534
卷号	9 期号:31 页码:10013-10019
摘要	Interface engineering is an effective way to improve the performance of heterojunction photodetectors (PDs). We have constructed p-Si/n-ZnGa2O4heterojunction solar-blind ultraviolet (UV) PDs with and without an SiO2interfacial layer and studied the effect of the SiO2interfacial layer on device performance in detail. At 1 V bias, the dark current of the device from 3.8 108A to 5.7 1012A was greatly reduced, specifically 6.7 103fold, attributed to the high barrier induced by the insertion of the SiO2interfacial layer. With the introduction of the SiO2interfacial layer, the photo-to-dark current ratio and the detectivity of the device were greatly improved due to the substantial reduction of dark current. Owing to the insertion of the SiO2layer reducing the carrier trapping at the interface defects, the rise and decay times of the device were significantly reduced from 0.96 s/0.88 s to 0.12 s/0.08 s,i.e.8 fold and 11 fold, respectively. Moreover, the large conduction band offset of Si/SiO2could effectively block visible-light-generated electrons in Si, thereby suppressing the visible-light response and enhancing the UV-visible rejection ratio of the Si/SiO2/ZnGa2O4PD. Our work has provided a feasible approach for enhancing the performance of Si/wide-bandgap semiconductor heterojunction solar-blind UV PDs. The Royal Society of Chemistry 2021.
DOI	10.1039/d1tc01705e
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收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65523
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	D. Han,K. Liu,J. Yang,et al. Performance enhancement of a p-Si/n-ZnGa2O4heterojunction solar-blind UV photodetector through interface engineering[J]. Journal of Materials Chemistry C,2021,9(31):10013-10019.
APA	D. Han,K. Liu,J. Yang,X. Chen,B. Li,&L. Liu and D. Shen.(2021).Performance enhancement of a p-Si/n-ZnGa2O4heterojunction solar-blind UV photodetector through interface engineering.Journal of Materials Chemistry C,9(31),10013-10019.
MLA	D. Han,et al."Performance enhancement of a p-Si/n-ZnGa2O4heterojunction solar-blind UV photodetector through interface engineering".Journal of Materials Chemistry C 9.31(2021):10013-10019.

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