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Numerical study of carrier reservoir semiconductor optical amplifier-based all-optical XOR logic gate
A. Kotb; Z. K.E and L. W
2021
发表期刊Journal of Modern Optics
ISSN9500340
卷号68期号:3页码:161-168
摘要The long carrier lifetime of the semiconductor optical amplifier (SOA) limits its operation speed and exploitation as ultrafast nonlinear switching element. Therefore, an alternative SOA with a faster carrier lifetime is desired for high speed photonic applications. In this paper, we employ the carrier reservoir SOA (CR-SOA) for the first time to demonstrate through simulations the feasibility of all-optical exclusive-OR (XOR) logic gate at 100 Gb/s. For this purpose, a pair of CR-SOAs are incorporated in a Mach-Zehnder Interferometer. The variation of the quality factor (QF) against the key operating parameters is examined for both CR-SOAs- and conventional SOAs-based XOR gate at 100 Gb/s, including the effect of amplified spontaneous emission. The results show that not only higher but also acceptable QF is obtained at 100 Gb/s only when using CR-SOAscompared to conventional bulk SOAs, i.e. QF = 18.5 versus 3.3, respectively. 2021 Informa UK Limited, trading as Taylor & Francis Group.
DOI10.1080/09500340.2021.1885760
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收录类别SCI ; EI
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/65474
专题中国科学院长春光学精密机械与物理研究所
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A. Kotb,Z. K.E and L. W. Numerical study of carrier reservoir semiconductor optical amplifier-based all-optical XOR logic gate[J]. Journal of Modern Optics,2021,68(3):161-168.
APA A. Kotb,&Z. K.E and L. W.(2021).Numerical study of carrier reservoir semiconductor optical amplifier-based all-optical XOR logic gate.Journal of Modern Optics,68(3),161-168.
MLA A. Kotb,et al."Numerical study of carrier reservoir semiconductor optical amplifier-based all-optical XOR logic gate".Journal of Modern Optics 68.3(2021):161-168.
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