Large-Area Monolayer MoS2Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

doi:10.1021/acsanm.1c02662

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	Large-Area Monolayer MoS2Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices
	P. Yang; H. Yang; Z. Wu; F. Liao; X. Guo; J. Deng; Q. Xu; H. Wang; J. Sun; F. Chen; W. Bao; L. Hu; Z. Liu; Y. Chen; Z.-J. Qiu; Z. Fang; R. Liu and C. Cong
	2021
Source Publication	ACS Applied Nano Materials
ISSN	25740970
Volume	4 Issue:11 Pages:12127-12136
Abstract	Van der Waals heterostructures composed of atomically thin two-dimensional (2D) materials and three-dimensional (3D) materials provide a multidimensional material integration strategy, which combines materials with different characteristics leading to a wider degree of freedom than a single component, and offer a way for developing electronic and optoelectronic devices with multifunctionalities, such as high-frequency electronic devices, photodetectors, valley-spin electronic devices, and so on. This report demonstrates the direct growth of large-area monolayer MoS2 single-crystal nanosheets with a side length of more than 100 m on 3D GaN substrates by the perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed-assisted chemical vapor deposition (CVD) method. The seeding promoters changed the growth kinetics of MoS2 on the GaN substrate, which is different from the previously reported epitaxial growth behavior. The size of our synthesized single-crystal MoS2 nanosheets is 2 orders of magnitude larger than the reported epitaxially grown MoS2 on the GaN substrate. Meanwhile, the as-synthesized MoS2 by the seed-assisted CVD method has comparable crystal quality as that of the reported epitaxially grown MoS2 on the GaN substrate. Moreover, detailed characterizations indicate that noticeable charge transfer occurs between MoS2 and the GaN substrate, which suggests that the MoS2/GaN heterostructure has great potential applications in the field of light-emitting diodes (LED) and valley-spin electronic devices. 2021 American Chemical Society.
DOI	10.1021/acsanm.1c02662
URL	查看原文
Indexed By	EI
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/65371
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	P. Yang,H. Yang,Z. Wu,et al. Large-Area Monolayer MoS2Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices[J]. ACS Applied Nano Materials,2021,4(11):12127-12136.
APA	P. Yang.,H. Yang.,Z. Wu.,F. Liao.,X. Guo.,...&R. Liu and C. Cong.(2021).Large-Area Monolayer MoS2Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices.ACS Applied Nano Materials,4(11),12127-12136.
MLA	P. Yang,et al."Large-Area Monolayer MoS2Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices".ACS Applied Nano Materials 4.11(2021):12127-12136.

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中国科学院长春光学精密机械与物理研究所