Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS

doi:10.1021/acs.nanolett.1c03169

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	Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS
	X. F. Lu; Y. Zhang; N. Wang; S. Luo; K. Peng; L. Wang; H. Chen; W. Gao; X. H. Chen; Y. Bao; G. Liang and K. P. Loh
	2021
Source Publication	Nano Letters
ISSN	15306984
Volume	21 Issue:20 Pages:8800-8807
Abstract	Memristor devices that exhibit high integration density, fast speed, and low power consumption are candidates for neuromorphic devices. Here, we demonstrate a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such as a switching voltage 0.2 V, a switching speed faster than 1.5 ns, high endurance switching cycles, and an ultralarge on/off ratio of 108. The device exhibits a power consumption as low as 100 fJ per switch. Chip-level simulations of the memristor based on 32 32 high-density crossbar arrays with 50 nm feature size reveal on-chip learning accuracy of 87.76% (close to the ideal software accuracy 90%) for CIFAR-10 image classifications. The ultrafast and low energy switching of p-type SnS compared to n-type transition metal dichalcogenides is attributed to the presence of cation vacancies and van der Waals gap that lower the activation barrier for Ag ion migration. 2021 American Chemical Society.
DOI	10.1021/acs.nanolett.1c03169
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Indexed By	SCI ; EI
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/65235
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	X. F. Lu,Y. Zhang,N. Wang,et al. Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS[J]. Nano Letters,2021,21(20):8800-8807.
APA	X. F. Lu.,Y. Zhang.,N. Wang.,S. Luo.,K. Peng.,...&G. Liang and K. P. Loh.(2021).Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS.Nano Letters,21(20),8800-8807.
MLA	X. F. Lu,et al."Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS".Nano Letters 21.20(2021):8800-8807.

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中国科学院长春光学精密机械与物理研究所