Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS

doi:10.1021/acs.nanolett.1c03169

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	Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS
	X. F. Lu; Y. Zhang; N. Wang; S. Luo; K. Peng; L. Wang; H. Chen; W. Gao; X. H. Chen; Y. Bao; G. Liang and K. P. Loh
	2021
发表期刊	Nano Letters
ISSN	15306984
卷号	21 期号:20 页码:8800-8807
摘要	Memristor devices that exhibit high integration density, fast speed, and low power consumption are candidates for neuromorphic devices. Here, we demonstrate a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such as a switching voltage 0.2 V, a switching speed faster than 1.5 ns, high endurance switching cycles, and an ultralarge on/off ratio of 108. The device exhibits a power consumption as low as 100 fJ per switch. Chip-level simulations of the memristor based on 32 32 high-density crossbar arrays with 50 nm feature size reveal on-chip learning accuracy of 87.76% (close to the ideal software accuracy 90%) for CIFAR-10 image classifications. The ultrafast and low energy switching of p-type SnS compared to n-type transition metal dichalcogenides is attributed to the presence of cation vacancies and van der Waals gap that lower the activation barrier for Ag ion migration. 2021 American Chemical Society.
DOI	10.1021/acs.nanolett.1c03169
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收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65235
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X. F. Lu,Y. Zhang,N. Wang,et al. Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS[J]. Nano Letters,2021,21(20):8800-8807.
APA	X. F. Lu.,Y. Zhang.,N. Wang.,S. Luo.,K. Peng.,...&G. Liang and K. P. Loh.(2021).Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS.Nano Letters,21(20),8800-8807.
MLA	X. F. Lu,et al."Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS".Nano Letters 21.20(2021):8800-8807.

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