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Epitaxial growth of epsilon-(AlGa)(2)O-3 films on sapphire substrate by PLD and the fabrication of photodetectors
Y. Y. Gao; Q. Feng; Z. Q. Feng; Y. Zuo; Y. C. Cai; Y. C. Zhang; J. Ning; C. F. Zhang; X. J. Sun; Z. T. Jia; J. C. Zhang and Y. Hao
2021
Source PublicationOptical Materials Express
ISSN2159-3930
Volume11Issue:2Pages:219-230
AbstractPure phase e-(AlGa)2O3 films were deposited utilizing pulsed laser deposition (PLD) on a sapphire (0001) substrate under the assistance of tin element. High resolution X-ray diffraction (HRXRD) reveals the presence of out-of-plane compressive strain in e-(AlGa)2O3 films. From XPS and TEM measurements, an increase in oxygen pressure causes a reduction in Al content and a rise in the film growth rate. Moreover, the e-(AlGa)2O3 films achieve a wider bandgap with a decrease in oxygen pressure, determined by the transmittance spectra and responsivity. For oxygen pressure increasing from 0.006mbar to 0.01mbar and 0.03mbar, the responsivity of the MSM photodetectors are 0.86A/W, 1.87A/W, and 4.38A/W, and an external quantum efficiency (EQE) of 448%, 946%, and 2114%, respectively, indicating larger gains in e-(AlGa)2O3 devices. (c) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
DOI10.1364/ome.413500
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Indexed BySCI
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Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/65225
Collection中国科学院长春光学精密机械与物理研究所
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Y. Y. Gao,Q. Feng,Z. Q. Feng,et al. Epitaxial growth of epsilon-(AlGa)(2)O-3 films on sapphire substrate by PLD and the fabrication of photodetectors[J]. Optical Materials Express,2021,11(2):219-230.
APA Y. Y. Gao.,Q. Feng.,Z. Q. Feng.,Y. Zuo.,Y. C. Cai.,...&J. C. Zhang and Y. Hao.(2021).Epitaxial growth of epsilon-(AlGa)(2)O-3 films on sapphire substrate by PLD and the fabrication of photodetectors.Optical Materials Express,11(2),219-230.
MLA Y. Y. Gao,et al."Epitaxial growth of epsilon-(AlGa)(2)O-3 films on sapphire substrate by PLD and the fabrication of photodetectors".Optical Materials Express 11.2(2021):219-230.
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