Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current

doi:10.1007/s11432-020-3179-9

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	Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current
	J. An; T. Sun; B. Wang; J. Xu and S. Li
	2021
发表期刊	Science China Information Sciences
ISSN	1674733X
卷号	64 期号:4
摘要	Graphene-based photodetectors have drawn a large amount of interests owing to its wide spectral response, however, the high dark current greatly limits their applications. In this study, we develop an efficient graphene in-plane homogeneous p-n-p junction based infrared (IR) photodetector with greatly reduced dark current. The devices with p-n-p junctions exhibit excellent photoresponse to 1.04.0 m IR light illumination with ultra-low dark current at the order of 109 A in double p-n-p junctions and 1013 A in three p-n-p junctions based photodetector, which is three and seven orders of magnitude lower than pristine graphene phototransistors, respectively. The excellent IR photodetection capabilities could be attributed to the synergistic effects of in-plane photovoltaic effects as well as the photogating effects induced carrier injection from the silicon substrate. Our results suggest intriguing potential of graphene in-plane p-n-p junctions for applications in high-performance IR photodetectors. 2021, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.
DOI	10.1007/s11432-020-3179-9
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收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65205
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J. An,T. Sun,B. Wang,et al. Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current[J]. Science China Information Sciences,2021,64(4).
APA	J. An,T. Sun,B. Wang,&J. Xu and S. Li.(2021).Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current.Science China Information Sciences,64(4).
MLA	J. An,et al."Efficient graphene in-plane homogeneous p-n-p junction based infrared photodetectors with low dark current".Science China Information Sciences 64.4(2021).

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