Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

doi:10.3390/app11188639

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	Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells
	Z. W. Li; Y. G. Zeng; Y. Song; J. W. Zhang; Y. L. Zhou; Y. Q. Ning; L. Qin and L. J. Wang
	2021
发表期刊	Applied Sciences-Basel
卷号	11 期号:18 页码:15
摘要	InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0 degrees, 2 degrees, and 15 degrees toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0 degrees substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2 degrees substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.
DOI	10.3390/app11188639
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收录类别	SCI
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65195
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Z. W. Li,Y. G. Zeng,Y. Song,et al. Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells[J]. Applied Sciences-Basel,2021,11(18):15.
APA	Z. W. Li.,Y. G. Zeng.,Y. Song.,J. W. Zhang.,Y. L. Zhou.,...&L. Qin and L. J. Wang.(2021).Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells.Applied Sciences-Basel,11(18),15.
MLA	Z. W. Li,et al."Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells".Applied Sciences-Basel 11.18(2021):15.

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