Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices

doi:10.1016/j.matlet.2021.129583

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	Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices
	Y. Chen; X. Zhou; Z. Zhang; G. Miao; H. Jiang; Z. Li and H. Song
	2021
发表期刊	Materials Letters
ISSN	0167577X
卷号	291
摘要	Herein, a metalsemiconductor-metal (MSM) structure dual-band solar-blind ultraviolet (UV) photodetector based on 60.5-period Al0.5Ga0.5N/AlN superlattices (SLs) is reported. The device exhibits distinct dominant responses in the solar-blind UV region with dual peaks located at 266 nm and 243 nm. The formation of dual-band solar-blind UV photodetection is clarified, which can be originated from the reflection enhancement property of the highly periodic Al0.5Ga0.5N/AlN SLs that restrains the light absorption around 259 nm resulting in weak spectral response in this specific waveband. 2021 Elsevier B.V.
DOI	10.1016/j.matlet.2021.129583
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收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65183
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. Chen,X. Zhou,Z. Zhang,et al. Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices[J]. Materials Letters,2021,291.
APA	Y. Chen,X. Zhou,Z. Zhang,G. Miao,H. Jiang,&Z. Li and H. Song.(2021).Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices.Materials Letters,291.
MLA	Y. Chen,et al."Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices".Materials Letters 291(2021).

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